MICROSTRUCTURE AND MICROSTRUCTURE PRODUCTION METHOD

• US 20110311800A1
• Filed: 06/21/2011
• Published: 12/22/2011
• Est. Priority Date: 06/22/2010
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: HATANAKA, Yusuke, YAMASHITA, Kosuke
• Application Number:
  US13/165,381
• Publication Number:
  US 20110311800A1
• Time in Patent Office: Days
• US Class Current: 428/304.4
• CPC Class Codes: C25D 1/006 Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
• CPC Class Codes: C25D 11/045 for forming AAO templates
• CPC Class Codes: C25D 11/20 Electrolytic after-treatment
• CPC Class Codes: C25D 11/26 of refractory metals or alloys based thereon
• CPC Class Codes: C25D 11/30 of magnesium or alloys based thereon
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/29 of an individual layer connector
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29298 Fillers
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 Fully indexed content
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01084 : Polonium [Po]
• CPC Class Codes: H01R 12/52 : connecting to other rigid printed circuits or like structures
• CPC Class Codes: H05K 2201/10378 : Interposers
• CPC Class Codes: H05K 2203/0315 : Oxidising metal
• CPC Class Codes: H05K 3/32 : electrically connecting electric components or wires to printed circuits
• CPC Class Codes: Y10T 428/249953 : Composite having voids in a component [e.g., porous, cellular, etc.]

Abstract

A microstructure enabling provision of an anisotropic conductive member capable of reducing wiring defects and a method of producing such microstructure. The microstructure includes through-holes formed in an insulating matrix and filled with a metal and an insulating substance. The through-holes have a density of 1×10⁶ to 1×10¹⁰ holes/mm², a mean opening diameter of 10 nm to 5000 nm, and a mean depth of 10 μm to 1000 μm. The sealing ratio of the through-holes as attained by the metal alone is 80% or more, and the sealing ratio of the through-holes as attained by the metal and the insulating substance is 99% or more. The insulating substance is at least one kind selected from the group consisting of aluminum hydroxide, silicon dioxide, metal alkoxide, lithium chloride, titanium oxide, magnesium oxide, tantalum oxide, niobium oxide, and zirconium oxide.

Claims

1. A microstructure comprising through-holes formed in an insulating matrix filled with a metal and an insulating substance,

wherein the through-holes have a density of 1×

10⁶ to 1×

10¹⁰ holes/mm², a mean opening diameter of 10 nm to 5000 nm, and a mean depth of 10 μ

m to 1000 μ

m,

wherein the sealing ratio of the through-holes as attained by the metal alone is 80% or more,

wherein the sealing ratio of the through-holes as attained by the metal and the insulating substance is 99% or more, and

wherein the insulating substance is at least one kind selected from the group consisting of aluminum hydroxide, silicon dioxide, metal alkoxide, lithium chloride, titanium oxide, magnesium oxide, tantalum oxide, niobium oxide, and zirconium oxide.

2. The microstructure according to claim 1, wherein the aspect ratio of the through-holes (mean depth/mean opening diameter) is 100 or more.

3. The microstructure according to claim 1, wherein the insulating matrix provided with the through-holes is an anodized film of a valve metal.

4. The microstructure according to claim 3, wherein the valve metal is at least one kind of metal selected from the group consisting of aluminum, tantalum, niobium, titanium, hafnium, zirconium, zinc, tungsten, bismuth, and antimony.

5. The microstructure according to claim 4, wherein the valve metal is aluminum.

6. The microstructure according to claim 1, wherein the metal is at least one kind selected from the group consisting of copper, gold, aluminum, nickel, silver, and tungsten.

7. A method of producing a microstructure described in claim 1, comprising

a metal filling step of applying an electrolytic plating to the insulating matrix to fill the through-holes with the metal to a sealing ratio of 80% or more, and

following the metal filling step, an insulating substance filling step of applying a sealing treatment to the insulating matrix filled with the metal to fill the insulating substance to a sealing ratio of 99% or more.

8. The microstructure according to claim 1, wherein the microstructure is used as anisotropic conductive member.

9. A multi-layer circuit board comprising two or more layers of anisotropic conductive member,

wherein the anisotropic conductive member is the microstructure described in claim 1.

10. The multi-layer circuit board according to claim 9 used as an interposer for a semiconductor package.