METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
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1. A method for manufacturing an electronic device comprising a conductive layer, a first insulating layer, and a protective insulating film, the method comprising the steps of:
- forming the first insulating layer over the conductive layer;
forming the protective insulating film over the first insulating layer;
forming a resist mask over the protective insulating film;
forming a hole by dry etching the protective insulating film and the first insulating layer according to the resist mask; and
removing the resist mask by ashing using oxygen plasma,wherein a width of the hole in the first insulating layer is smaller than or equal to a width of the hole in the protective insulating film.
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Abstract
An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole.
29 Citations
20 Claims
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1. A method for manufacturing an electronic device comprising a conductive layer, a first insulating layer, and a protective insulating film, the method comprising the steps of:
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forming the first insulating layer over the conductive layer; forming the protective insulating film over the first insulating layer; forming a resist mask over the protective insulating film; forming a hole by dry etching the protective insulating film and the first insulating layer according to the resist mask; and removing the resist mask by ashing using oxygen plasma, wherein a width of the hole in the first insulating layer is smaller than or equal to a width of the hole in the protective insulating film. - View Dependent Claims (4, 9, 12, 15, 18)
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2. A method for manufacturing a transistor comprising an oxide semiconductor layer, a gate electrode, one of a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a first insulating layer, a protective insulating film, and a wiring, the method comprising the steps of:
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forming the oxide semiconductor layer over the gate electrode; forming the one of the source electrode and the drain electrode in electrical contact with the oxide semiconductor layer; forming the first insulating layer over the one of the source electrode and the drain electrode, and on and in contact with the oxide semiconductor layer; forming the protective insulating film over the first insulating layer; forming a resist mask over the protective insulating film; forming a contact hole by dry etching the protective insulating film and the first insulating layer according to the resist mask; removing the resist mask by ashing using oxygen plasma; and forming the wiring over the protective insulating film and in electrical contact with at least one of the gate electrode and the one of the source electrode and the drain electrode, through the contact hole, wherein a width of the contact hole in the first insulating layer is smaller than or equal to a width of the contact hole in the protective insulating film. - View Dependent Claims (5, 7, 10, 13, 16, 19)
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3. A method for manufacturing a transistor comprising an oxide semiconductor layer, a gate electrode, one of a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a first insulating layer, a protective insulating film, and a wiring, the method comprising the steps of:
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forming the one of the source electrode and the drain electrode in electrical contact with the oxide semiconductor layer; forming the first insulating layer over the one of the source electrode and the drain electrode, and on and in contact with the oxide semiconductor layer; forming the gate electrode over the first insulating layer; forming the protective insulating film over the first insulating layer and the gate electrode; forming a resist mask over the protective insulating film; forming a contact hole by dry etching the protective insulating film and the first insulating layer according to the resist mask; removing the resist mask by ashing using oxygen plasma; and forming the wiring over the protective insulating film and in electrical contact with at least one of the gate electrode and the one of the source electrode and the drain electrode, through the contact hole, wherein a width of the contact hole in the first insulating layer is smaller than or equal to a width of the contact hole in the protective insulating film. - View Dependent Claims (6, 8, 11, 14, 17, 20)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsSasagawa, Shinya, Ishizuka, Akihiro, Yonemitsu, Yutaka
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/104
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CPC Class CodesH01L 21/31111 by chemical meansH01L 23/535 including internal intercon...H01L 27/1225 with semiconductor material...H01L 29/7869 having a semiconductor body...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...
