METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND BONDING APPARATUS

• US 20110315743A1
• Filed: 08/22/2011
• Published: 12/29/2011
• Est. Priority Date: 02/23/2009
• Status: Active Grant

• Current Assignee: Shinkawa Ltd. (Yamaha Corporation)
• Original Assignee: Shinkawa Ltd. (Yamaha Corporation)
• Inventors: MARUYA, Yusuke, AOYAGI, Nobuyuki
• Granted Patent: US 8,292,160 B2
• Time in Patent Office: Days
• US Class Current: 228/102
• CPC Class Codes: B23K 20/007 Ball bonding
• CPC Class Codes: B23K 20/10 making use of vibrations, e.g. ultrasonic welding
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/78268 Discharge electrode
• CPC Class Codes: H01L 2224/78301 Capillary
• CPC Class Codes: H01L 2224/78801 Lower part of the bonding apparatus, e.g. XY table
• CPC Class Codes: H01L 2224/78823 Pivoting mechanism
• CPC Class Codes: H01L 2224/78901 using a computer, e.g. fully- or semi-automatic bonding
• CPC Class Codes: H01L 2224/85045 using a corona discharge, e.g. electronic flame off [EFO]
• CPC Class Codes: H01L 2224/85181 connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
• CPC Class Codes: H01L 2224/85205 Ultrasonic bonding
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/78 Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]

Abstract

In a first bonding step of bonding an initial ball to a pad surface, the initial ball is applied by ultrasonic vibration while in pressure contact with the pad surface and a capillary undergoes a scrubbing motion to be rotated spirally. This allows a deformation area of the initial ball to be reduced, whereby the accuracy of bonding can be improved. In a second bonding step of bonding a bonding wire to a lead surface, the capillary and the bonding wire are applied by ultrasonic vibration while in pressure contact with the lead surface and the capillary undergoes a scrubbing motion to be rotated spirally. This allows the bonding wire bonded to the lead surface to be cut reliably.

Claims

1. A method of manufacturing a semiconductor device comprising:

a step of preparing a bonding apparatus comprising;

a bonding stage for placing a bonding target that is provided with a pad surface;

a capillary for inserting a bonding wire therethrough, the bonding wire having an initial ball formed at the tip end thereof; and

a control unit having pressure contact means for bringing the initial ball into pressure contact with the pad surface of the bonding target placed on the bonding stage and scrubbing means for spirally rotating the capillary in a direction perpendicular to the direction of pressure on the initial ball when the initial ball is in pressure contact with the pad surface;

a pressure contact step of controlling the pressure contact means for bringing the initial ball formed at the tip end of the bonding wire that is inserted through the capillary into pressure contact with the pad surface of the bonding target placed on the bonding stage based on a command from the control unit in the bonding apparatus; and

a scrubbing step of controlling the scrubbing means for spirally rotating the capillary in a direction perpendicular to the direction of pressure on the initial ball when the initial ball is in pressure contact with the pad surface based on a command from the control unit in the bonding apparatus.

2. The method of manufacturing a semiconductor device according to claim 1, wherein the scrubbing step comprises specifying the position where the initial ball comes into contact with the pad surface as a reference position, spirally rotating the capillary from the reference position while increasing the diameter of the spiral, and thereafter spirally rotating the capillary while reducing the diameter of the spiral to recover the reference position.

3. The method of manufacturing a semiconductor device according to claim 1, wherein the scrubbing step comprises, when the pad surface has an extended shape, spirally rotating the capillary in a flattened manner along the direction of extension of the pad surface.

4. A bonding apparatus comprising:

a bonding stage for placing a bonding target that is provided with a pad surface;

a capillary for inserting a bonding wire therethrough, the bonding wire having an initial ball formed at the tip end thereof; and

a control unit having pressure contact means for bringing the initial ball into pressure contact with the pad surface of the bonding target placed on the bonding stage and scrubbing means for spirally rotating the capillary in a direction perpendicular to the direction of pressure on the initial ball when the initial ball is in pressure contact with the pad surface.

5. A method of manufacturing a semiconductor device comprising:

a step of preparing a bonding apparatus comprising;

a bonding stage for placing a bonding target that is provided with a lead surface;

a capillary for inserting a bonding wire therethrough; and

a control unit having pressure contact means for bringing the capillary and the bonding wire inserted through the capillary into pressure contact with the lead surface of the bonding target placed on the bonding stage and scrubbing means for spirally rotating the capillary in a direction perpendicular to the direction of pressure on the capillary when the capillary is in pressure contact with the lead surface;

a pressure contact step of controlling the pressure contact means for bringing the capillary with the bonding wire inserted therethrough and the bonding wire inserted through the capillary into pressure contact with the lead surface of the bonding target placed on the bonding stage based on a command from the control unit in the bonding apparatus; and

a scrubbing step of controlling the scrubbing means for spirally rotating the capillary in a direction perpendicular to the direction of pressure on the capillary when the capillary is in pressure contact with the lead surface based on a command from the control unit in the bonding apparatus.

6. The method of manufacturing a semiconductor device according to claim 5, wherein the scrubbing step comprises specifying the position where the capillary comes into contact with the lead surface as a reference position, spirally rotating the capillary from the reference position while increasing the diameter of the spiral, and thereafter spirally rotating the capillary while reducing the diameter of the spiral to recover the reference position.

7. The method of manufacturing a semiconductor device according to claim 5, wherein the scrubbing step comprises, when the lead surface has an extended shape, spirally rotating the capillary in a flattened manner along the direction of extension of the lead surface.

8. A bonding apparatus comprising:

a bonding stage for placing a bonding target that is provided with a lead surface;

a capillary for inserting a bonding wire therethrough; and

a control unit having pressure contact means for bringing the capillary and the bonding wire inserted through the capillary into pressure contact with the lead surface of the bonding target placed on the bonding stage and scrubbing means for spirally rotating the capillary in a direction perpendicular to the direction of pressure on the capillary when the capillary is in pressure contact with the lead surface.