SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SAME

• US 20110315996A1
• Filed: 07/29/2009
• Published: 12/29/2011
• Est. Priority Date: 08/01/2008
• Status: Active Grant

• Current Assignee: LG Siltron Inc. (SK Inc.)
• Original Assignee: LG Siltron Inc. (SK Inc.)
• Inventors: Kim, Yong Jin, Lee, Dong Kun, Kim, Doo Soo
• Granted Patent: US 9,425,352 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/02581 Transition metal or rare earth elements
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Claims

1. A semiconductor device comprising:

a substrate;

a plurality of rods aligned on the substrate;

a metal layer disposed on the substrate between the rods; and

a semiconductor layer disposed on and between the rods.

2. The semiconductor device of claim 1, further comprising a plurality of particles formed on the rods, respectively.

3. The semiconductor device of claim 2, wherein the particles include silicon oxide, sapphire, titanium oxide, zirconium oxide, Y₂O3—

ZrO₂, copper oxide, tantalum oxide, Pb(Zr,Ti)O₃, niobium oxide, FeSO₄, iron oxide, sodium sulfite, GeO₂, or CdS.

4. The semiconductor device of claim 1, wherein the rods are randomly aligned on the substrate.

5. The semiconductor device of claim 1, wherein the semiconductor layer is directly connected to the metal layer, and includes an electrode connected to the metal layer.

6. The semiconductor device of claim 1, wherein the semiconductor layer includes GaN, InN, MN, InGaN, AlGaN, AlInN or AlInGaN.

7. The semiconductor device of claim 1, wherein the semiconductor layer is doped with Si, Ge, Mg, Zn, O, Se, Mn, Ti, Ni or Fe.

8. The semiconductor device of claim 1, wherein the metal layer includes Pt, Au, Ag, Ta, Ti, Cr, Al, Cu or an alloy thereof.

9. The semiconductor device of claim 1, wherein a plurality of pores are formed between the metal layer and the semiconductor layer.

10. The semiconductor device of claim 1, wherein each rod has a diameter of about 10 nm to 2 μ

m.

11. The semiconductor device of claim 1, wherein the metal layer has a concave surface.

12. The semiconductor device of claim 1, wherein a thickness of the metal layer is smaller than a height of the rod.

13. The semiconductor device of claim 1, wherein the substrate is integrally formed with the rods.

14. A light emitting device comprising:

a substrate;

a plurality of rods aligned on the substrate while being spaced apart from each other;

a metal layer disposed on the substrate between the rods;

a first conductive type semiconductor layer disposed on and between the rods;

an active layer disposed on the first conductive type semiconductor layer; and

a second conductive type semiconductor layer disposed on the active layer.

15. The light emitting device of claim 14, further comprising a plurality of particles formed on the rods, respectively.

16. The light emitting device of claim 14, wherein the rods are randomly aligned on the substrate.

17. The light emitting device of claim 14, further comprising:

a first electrode connected to the first conductive type semiconductor layer through the metal layer; and

a second electrode connected to the second conductive type semiconductor layer.

18. A method of manufacturing a semiconductor device, the method comprising:

preparing a substrate;

disposing a plurality of particles on the substrate; and

forming a plurality of rods by etching a part of the substrate using the particles as a mask.

19. The method of claim 18, further comprising:

forming metal layer between the rods; and

forming a first semiconductor layer on and between the rods.

20. The method of claim 19, wherein the substrate is prepared by forming a second semiconductor layer on a support substrate, and the rods are formed by etching the second semiconductor layer.

21. The method of claim 19, wherein the second semiconductor layer is etched until a top surface of the support substrate is exposed.

22. The method of claim 19, wherein the particles are removed after the metal layer are formed.

23. The method of claim 19, wherein the first semiconductor layer is selectively grown from lateral sides and top surfaces of the rods.