CHIP-TYPE LIGHT EMITTING DEVICE HAVING PRECISELY COATED WAVELENGTH-CONVERTING LAYER AND PACKAGED STRUCTURE THEREOF

• US 20110316027A1
• Filed: 05/27/2011
• Published: 12/29/2011
• Est. Priority Date: 06/29/2010
• Status: Active Grant

• Current Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Original Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Inventors: Liu, Wen-Huang, Dan, Chung-Che, Chang, Yuan-Hsiao, Kao, Hung-Jen
• Granted Patent: US 8,614,453 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.

Claims

1. A chip-type light emitting device comprising:

one or more light emitting semiconductors; and

one or more frames provided over a top of the one or more light emitting semiconductors.

2. The chip-type light emitting device of claim 1, further comprising:

one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames.

3. The chip-type light emitting device of claim 1, wherein the one or more frames are capable of extending to cover a side portion of the one or more light emitting semiconductors.

4. The chip-type light emitting device of claim 2, wherein the one or more frames are capable of extending to cover a side portion of the one or more light emitting semiconductors.

5. The chip-type light emitting device of claim 4, wherein the one or more wavelength-converting layers are capable of encapsulating a side portion of the one or more light emitting semiconductors.

6. The chip-type light emitting device of claim 2, wherein the chip-type light emitting device is capable of emitting a light having a peak wavelength ranging between about 200 nm and about 500 nm.

7. The chip-type light emitting device of claim 2, wherein the one or more wavelength-converting layers are applied using at least one of precise dispensing, precise stamping, precise jetting, and screen printing.

8. The chip-type light emitting device of claim 2, wherein the one or more wavelength-converting layers include fluorescent particles mixed with one or more organic chemicals.

9. The chip-type light emitting device of claim 8, wherein a weight ratio of the fluorescent particles to the one or more organic chemicals is about 0.6 to 8.

10. The chip-type light emitting device of claim 8, wherein the one or more organic chemicals are silicone resin and/or epoxy resin.

11. The chip-type light emitting device of claim 2, wherein one or more wavelength-converting layers include fluorescent particles mixed with a glass.

12. The chip-type light emitting device of claim 11, wherein a weight ratio of the fluorescent particles to the glass is about 0.6 to 8

13. The chip-type light emitting device of claim 11, wherein the one or more wavelength-converting layers mixed with the glass are applied using at least one of precise dispensing, precise stamping, precise jetting, and screen printing.

14. The chip-type light emitting device of claim 13, wherein the one or more wavelength-converting layers mixed with the glass are applied at a temperature ranging between about 100°

C. and about 500°

C.

15. The chip-type light emitting device of claim 2, wherein the one or more wavelength-converting layers have a convex, a concave, a flat, or a pyramid shape.

16. The chip-type light emitting device of claim 1, wherein the one or more frames are made of a transparent material.

17. The chip-type light emitting device of claim 16, wherein the transparent material is epoxy resin, silicone resin, polyimide resin, glass, quartz, acryl resin, polycarbonate resin, SU-8 resist, BCB resist, or parylene resin.

18. The chip-type light emitting device of claim 1, wherein the one or more frames are provided using at least one of spin coating, dip coating, chemical vapor deposition, thermal evaporation, and e-beam evaporation.

19. The chip-type light emitting device of claim 1, wherein the one or more frames are a single metallic layer or multiple metallic layers.

20. The chip-type light emitting device of claim 1, wherein the one or more frames have a thickness of about 0.1 μ

m to about 200 μ

m.

21. The chip-type light emitting device of claim 2, wherein the one or more wavelength-converting layers have a thickness of about 1 μ

m to about 200 μ

m.

22. The chip-type light emitting device of claim 2, further comprising:

a light diffusion layer provided on the one or more wavelength-converting layers

23. The chip-type light emitting device of claim 2, wherein a surface of the one or more light emitting semiconductors that is adjacent to the one or more wavelength-converting layers is roughened.

24. The chip-type light emitting device of claim 2, wherein the one or more wavelength-converting layers undergo a heat treatment.

25. The chip-type light emitting device of claim 24, wherein a temperature of the heat treatment is between about 60°

C. and about 300°

C.

26. The chip-type light emitting device of claim 1, wherein the one or more light emitting semiconductors include:

a p-type semiconductor layer;

an activation layer provided on the p-type semiconductor layer; and

an n-type semiconductor layer provided on the activation layer.

27. The chip-type light emitting device of claim 2, wherein the one or more wavelength-converting layers are capable of encapsulating a portion of the one or more frames.

28. The chip-type light emitting device of claim 1, further comprising:

a reflection layer provided on a bottom of the one or more light emitting semiconductors.

29. A package structure of a chip-type light emitting device comprising:

a leadframe;

an attachment layer provided on the leadframe;

a substrate provided on the attachment layer;

the chip-type light emitting device of claim 1 coupled to the substrate; and

one or more bonding pads provided on the chip-type light emitting device.

30. The package structure of claim 29, further comprising:

one or more wavelength-converting layers applied on the one or more light emitting semiconductors of the chip-type light emitting device and confined by the one or more frames of the chip-type light emitting device.

31. The package structure of claim 29, further comprising:

one or more wires connected with the one or more bonding pads such that the chip-type light emitting device is electrically connected to the leadframe.

32. The package structure of claim 31, further comprising:

one or more wavelength-converting layers applied on the one or more light emitting semiconductors of the chip-type light emitting device and confined by the one or more frames of the chip-type light emitting device.

33. The package structure of claim 32, further comprising:

a transparent encapsulation layer configured to encapsulate the one or more wavelength-converting layers and to encapsulate the chip-type light emitting device.

34. The package structure of claim 33, wherein the transparent encapsulation layer is made of at least one of transparent materials including epoxy resin, silicone resin, polyimide resin, glass, quartz, acryl resin, polycarbonate resin, and parylene resin.

35. The package structure of claim 33, wherein the transparent encapsulation layer has a convex, a concave, a flat, or a pyramid shape.

36. The package structure of claim 33, wherein the transparent encapsulation layer has features of a Fresnel lens.

37. The package structure of claim 33, further comprising:

a light diffusion layer provided on the transparent encapsulation layer.

38. The package structure of claim 29, wherein the substrate is opaque.

39. The package structure of claim 38, wherein the substrate is metal, ceramic, or semiconductor.

40. The package structure of claim 39, further comprising:

a reflection layer provided between the substrate and the chip-type light emitting device.

41. The package structure of claim 30, further comprising:

a light diffusion layer provided on the one or more wavelength-converting layers.

42. The package structure of claim 32, further comprising:

a light diffusion layer provided on the one or more wavelength-converting layers.