SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device, comprising:
- an antenna switch having a transmission terminal, an antenna terminal, and a reception terminal,wherein the antenna switch is a semiconductor device having;
(a) a plurality of first field effect transistors coupled in series between the transmission terminal and the antenna terminal; and
(b) a plurality of second field effect transistors coupled in series between the reception terminal and the antenna terminal, andwherein, between a source region and a drain region of each of the second field effect transistors coupled in series, a capacitance circuit is coupled which has a voltage dependency such that, in either of cases where a positive voltage is applied to the drain region based on a potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, a capacitance decreases to a value smaller than that in a state where the potential of the source region and a potential of the drain region are at the same level.
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Accused Products
Abstract
In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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an antenna switch having a transmission terminal, an antenna terminal, and a reception terminal, wherein the antenna switch is a semiconductor device having; (a) a plurality of first field effect transistors coupled in series between the transmission terminal and the antenna terminal; and (b) a plurality of second field effect transistors coupled in series between the reception terminal and the antenna terminal, and wherein, between a source region and a drain region of each of the second field effect transistors coupled in series, a capacitance circuit is coupled which has a voltage dependency such that, in either of cases where a positive voltage is applied to the drain region based on a potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, a capacitance decreases to a value smaller than that in a state where the potential of the source region and a potential of the drain region are at the same level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 17, 19)
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9. A semiconductor device, comprising:
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an antenna switch having a transmission terminal, an antenna terminal, and a reception terminal, wherein the antenna switch is a semiconductor device having; (a) a plurality of first field effect transistors coupled in series between the transmission terminal and the antenna terminal; and (b) a plurality of second field effect transistors coupled in series between the reception terminal and the antenna terminal, and wherein, between a first coupling terminal and a second coupling terminal which are between the second field effect transistors, a capacitance circuit is coupled which has a voltage dependency such that, in either of cases where a positive voltage is applied to the second coupling terminal based on a potential of the first coupling terminal and where a negative voltage is applied to the second coupling terminal based on the potential of the first coupling terminal, a capacitance decreases to a value smaller than that in a state where the potential of the first coupling terminal and a potential of the second coupling terminal are at the same level. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 18, 20)
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Specification