Semiconductor Arrangement, Semiconductor Module, and Method for Connecting a Semiconductor Chip to a Ceramic Substrate
First Claim
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1. A semiconductor arrangement comprising:
- a silicon body having a top surface and a bottom surface;
a thick metal layer arranged on the top surface of said silicon body, said thick metal layer having a bonding surface facing away from the top surface of said silicon body;
a bonding wire or a ribbon bonded to said thick metal layer at the bonding surface of said thick metal layer; and
wherein the thickness of said thick metal layer is at least 10 micrometers (μ
m), said thick metal layer comprises copper or a copper alloy, and said bonding wire or ribbon comprises copper or a copper-based material.
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Abstract
A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least 10 micrometers (μm), the thick metal layer comprises copper or a copper alloy, and the bonding wire or ribbon comprises copper or a copper-based material.
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Citations
18 Claims
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1. A semiconductor arrangement comprising:
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a silicon body having a top surface and a bottom surface; a thick metal layer arranged on the top surface of said silicon body, said thick metal layer having a bonding surface facing away from the top surface of said silicon body; a bonding wire or a ribbon bonded to said thick metal layer at the bonding surface of said thick metal layer; and wherein the thickness of said thick metal layer is at least 10 micrometers (μ
m), said thick metal layer comprises copper or a copper alloy, and said bonding wire or ribbon comprises copper or a copper-based material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor arrangement comprising:
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a silicon body having a top surface and a bottom surface; a thick metal layer arranged on the top surface of said silicon body, said thick metal layer having a bonding surface facing away from the top surface of said silicon body; a bonding wire or a ribbon bonded to said thick metal layer at the bonding surface of said thick metal layer, wherein the bonding wire has a thickness of at least 30 micrometers (μ
m) and the ribbon has a thickness of at least 200 micrometers (μ
m) and a width of at least 1 millimeter (mm); andwherein the thickness of said thick metal layer is at least 10 micrometers (μ
m), said thick metal layer comprises copper or a copper alloy, and said bonding wire or ribbon comprises copper or a copper-based material. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification