PHOTO DETECTOR AND METHOD FOR FABRICATING THE SAME
First Claim
1. A method for fabricating a photo detector, comprising:
- providing a substrate having a transistor region and a photosensitive region;
forming a first patterned semiconductor layer having a first state on the transistor region of the substrate, wherein the first patterned semiconductor layer comprises a first doping region and a second doping region;
covering a dielectric layer on the substrate and the first patterned semiconductor layer of the transistor region;
forming a patterned conductive layer on the dielectric layer of the transistor region and the dielectric layer of the photosensitive region;
covering an interlayer dielectric layer on the dielectric layer and the patterned conductive layer, wherein the interlayer dielectric layer comprises at least two openings to expose a portion of the first doping region and the second doping region of the first patterned semiconductor layer;
forming a second patterned semiconductor layer having a second state on the photosensitive region;
forming two first electrodes on the interlayer dielectric layer and electrically connecting the first electrodes to the first patterned semiconductor layer; and
forming two second electrodes on a portion of the second patterned semiconductor layer.
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Accused Products
Abstract
A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.
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Citations
16 Claims
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1. A method for fabricating a photo detector, comprising:
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providing a substrate having a transistor region and a photosensitive region; forming a first patterned semiconductor layer having a first state on the transistor region of the substrate, wherein the first patterned semiconductor layer comprises a first doping region and a second doping region; covering a dielectric layer on the substrate and the first patterned semiconductor layer of the transistor region; forming a patterned conductive layer on the dielectric layer of the transistor region and the dielectric layer of the photosensitive region; covering an interlayer dielectric layer on the dielectric layer and the patterned conductive layer, wherein the interlayer dielectric layer comprises at least two openings to expose a portion of the first doping region and the second doping region of the first patterned semiconductor layer; forming a second patterned semiconductor layer having a second state on the photosensitive region; forming two first electrodes on the interlayer dielectric layer and electrically connecting the first electrodes to the first patterned semiconductor layer; and forming two second electrodes on a portion of the second patterned semiconductor layer. - View Dependent Claims (2, 3, 4)
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5. A display panel, having a display area and a non-display area, comprising:
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a plurality of pixels disposed in the display area; at least one driving circuit electrically connected to the pixels; and at least one photosensitive region having at least one photo detector electrically connected to the at least one driving circuit, the at least one photo detector, comprising; a substrate having a transistor region and a photosensitive region; a first patterned semiconductor layer having a first state disposed on the transistor region of the substrate, wherein the first patterned semiconductor layer comprises a first doping region and a second doping region; a dielectric layer covering the substrate and the first patterned semiconductor layer of the transistor region; a patterned conductive layer formed on the dielectric layer of the transistor region and the dielectric layer of the photosensitive region; an interlayer dielectric layer covering the dielectric layer and the patterned conductive layer; a second patterned semiconductor layer having a second state disposed on the photosensitive region; two first electrodes formed on the interlayer dielectric layer and electrically connected with the first patterned semiconductor layer; and two second electrodes formed on a portion of the second patterned semiconductor layer. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification