METHOD FOR FORMING TANTALUM NITRIDE FILM AND FILM-FORMING APPARATUS FOR FORMING THE SAME

• US 20110318505A1
• Filed: 12/07/2009
• Published: 12/29/2011
• Est. Priority Date: 12/09/2008
• Status: Abandoned Application

• Current Assignee: Ulvac Incorporated
• Original Assignee: Ulvac Incorporated
• Inventors: Ushikawa, Harunori, Kato, Nobuyuki, Yamada, Takakazu, Yamamoto, Akiko
• Application Number:
  US13/130,997
• Publication Number:
  US 20110318505A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: H01L 21/28562 Selective deposition

Abstract

A method for forming a tantalum nitride film, which comprises supplying a gaseous nitrogen atom-containing compound, as a reactant gas and supplying gaseous t-amylimido-tris-(dimethylamide)tantalum, as a gaseous raw material, to the surface of the substrate S to thus form a tantalum nitride film on the surface of the substrate S; and a film-forming apparatus, which comprises a reactant gas supply line L4; a container 13 for liquefy a raw material; an evaporator 11 for gasify the liquefied raw material; a liquid mass flow controller 12 for controlling the amount of the liquid raw material to be supplied; and a gaseous raw material supply line L1. These method and apparatus would permit the stable supply of the gaseous raw material at all times and the improvement of the throughput of the substrate to be processed and as a result, the method and the apparatus permit the improvement of the productivity of the tantalum nitride film.

Claims

1-10. -10. (canceled)

11. A method for forming a tantalum nitride film comprising the steps of supplying a gas of a nitrogen atom-containing compound, as a reactant gas, onto the surface of a substrate;

and supplying gasified t-amylimido-tris(dimethylamide)tantalum, as a gaseous raw material, which is obtained by heating t-amylimido-tris-(dimethylamide)tantalum at a temperature ranging from 40 to 80°

C. to liquefy the tantalum compound and then heating the resulting liquid in an evaporator at a temperature of not less than 100°

C. to gasify the liquid, to thus form a tantalum nitride film on the substrate.

13. The method for forming a tantalum nitride film as set forth in claim 11, wherein the method for forming the tantalum nitride film makes use of a catalyst, heat or plasma.

15. The method for forming a tantalum nitride film as set forth in claim 11, wherein the gas of the nitrogen atom-containing compound is one selected from the group consisting of nitrogen gas, ammonia gas, hydrazine gas, and a gaseous hydrazine derivative.

17. The method for forming a tantalum nitride film as set forth in claim 13, wherein the gas of the nitrogen atom-containing compound is one selected from the group consisting of nitrogen gas, ammonia gas, hydrazine gas, and a gaseous hydrazine derivative.

12. A method for forming a tantalum nitride film comprising the step of supplying, in a pulsative manner, gasified t-amylimido-tris(dimethylamide)tantalum, as a gaseous raw material, on the surface of a substrate, which is obtained by heating t-amylimido-tris(dimethylamide)tantalum to a temperature ranging from 40 to 80°

C. to liquefy the tantalum compound and then heating the resulting liquid in an evaporator to a temperature of not less than 100°

C. to gasify the liquid, while supplying a gas of a nitrogen atom-containing compound, as a reactant gas, onto the surface of the substrate, to form a tantalum nitride film on the substrate.

14. The method for forming a tantalum nitride film as set forth in claim 12, wherein the method for forming the tantalum nitride film makes use of a catalyst, heat or plasma.

16. The method for forming a tantalum nitride film as set forth in claim 12, wherein the gas of the nitrogen atom-containing compound is one selected from the group consisting of nitrogen gas, ammonia gas, hydrazine gas, and a gaseous hydrazine derivative.

18. The method for forming a tantalum nitride film as set forth in claim 14, wherein the gas of the nitrogen atom-containing compound is one selected from the group consisting of nitrogen gas, ammonia gas, hydrazine gas, and a gaseous hydrazine derivative.

19. A method for forming a tantalum nitride film which comprises forming a tantalum nitride film on the surface of a substrate and then forming, on the tantalum nitride film, a film of a metal selected from the group consisting of copper, tungsten, aluminum, tantalum, titanium, ruthenium, cobalt, nickel and alloys thereof, wherein the tantalum nitride film is formed by supplying, onto the surface of the substrate, gasified t-amylimido-tris (dimethylamide)tantalum as a gaseous raw material, in a pulsative manner, which is obtained by heating t-amylimido-tris(dimethyl-amide)tantalum to a temperature ranging from 40 to 80°

C. to liquefy the tantalum compound and then heating the resulting liquid in an evaporator to a temperature of not less than 100°

C. to gasify the liquid, while supplying a gaseous nitrogen atom-containing compound, as a reactant gas, onto the surface of the substrate.

20. A method for forming a tantalum nitride film characterized in that a catalyst, heat or plasma is used as a means for converting a reactant gas into activated species and that a tantalum nitride film is formed on the surface of a substrate by supplying, in a pulsative manner, a gaseous raw material, onto the surface of a substrate, which is prepared by heating t-amylimido-tris(dimethyl-amide)tantalum to a temperature ranging from 40 to 80°

C. to liquefy the tantalum compound and then heating the resulting liquid in an evaporator to a temperature of not less than 100°

C. to gasify the liquid, while supplying a gas, as the reactant gas, selected from the group consisting of nitrogen gas, ammonia gas, hydrazine gas, and a gaseous hydrazine derivative, onto the surface of the substrate.

21. A film-forming apparatus equipped with a vacuum processing chamber which permits the formation of a film in a gas phase, while making use of a catalyst, heat or plasma, wherein the apparatus comprises a reactant gas supply line for supplying a reactant gas onto the surface of a substrate positioned within the vacuum processing chamber;

a container for heating t-amylimido-tris(dimethylamide)tantalum used for forming a gaseous raw material to a temperature ranging from 40 to 80°

C. to liquefy the tantalum compound;

an evaporator for heating the liquefied t-amylimido-tris (dimethylamide)tantalum to a temperature of not less than 100°

C. to gasify the liquid;

a liquid mass flow controller for adjusting the amount of the liquid tantalum compound to be supplied to the evaporator; and

a gaseous raw material supply line for supplying the gas formed in the evaporator to the surface of the substrate positioned within the vacuum processing chamber.

22. The film-forming apparatus as set forth in claim 21, wherein the evaporator is further directly connected to the vacuum processing chamber.

23. The film-forming apparatus as set forth in claim 21, wherein the apparatus is further provided with a catalyst wire for converting the reactant gas into activated species, which is disposed on the reactant gas supply line.

24. The film-forming apparatus as set forth in claim 22, wherein the apparatus is further provided with a catalyst wire for converting the reactant gas into activated species, which is disposed on the reactant gas supply line.

25. The film-forming apparatus as set forth in claim 23, wherein the apparatus is further provided with a heating mechanism for heating the catalyst wire.

26. The film-forming apparatus as set forth in claim 24, wherein the apparatus is further provided with a heating mechanism for heating the catalyst wire.