PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE

• US 20110318871A1
• Filed: 02/25/2010
• Published: 12/29/2011
• Est. Priority Date: 07/10/2009
• Status: Abandoned Application

• Current Assignee: Mitsubishi Heavy Industries, Ltd.
• Original Assignee: Mitsubishi Heavy Industries, Ltd.
• Inventors: Horioka, Tatsuji, Yamashita, Nobuki, Yamaguchi, Kengo
• Application Number:
  US13/203,935
• Publication Number:
  US 20110318871A1
• Time in Patent Office: Days
• US Class Current: 438/98
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

There are provided a thermal barrier coating material and a thermal barrier coating member that can suppress spalling when used at a high temperature and have a high thermal barrier effect, a method for producing the same, a turbine member coated with a thermal barrier coating, and a gas turbine. The thermal barrier coating member comprises a heat resistant substrate, a bond coat layer formed thereon, and a ceramic layer formed further thereon, wherein the ceramic layer comprises an oxide which consists of an oxide represented by the general formula A₂Zr₂O₇ doped with a predetermined amount of CaO or MgO and has 10 volume % or more of a pyrochlore type crystal structure, where A represents any of La, Nd, Sm, Gd, and Dy.

Claims

1. A process for producing a photovoltaic device, the process comprising forming two photovoltaic layers and a back electrode layer on a substrate, wherein

formation of the back electrode layer comprises a backside transparent electrode layer formation step and a Cu thin film formation step,

the Cu thin film formation step comprises, in sequence, an evacuation step and a deposition step,

an ultimate pressure reached in the evacuation step is not more than 2×

10 Pa, and

a temperature in the deposition step is not less than 120°

C. and not more than 240°

C.

2. The process for producing a photovoltaic device according to claim 1, wherein

the deposition step comprises an initial stage of applying an initial target supplied electric power density, and a steady-state stage of maintaining a steady-state target supplied electric power density, and

the initial target supplied electric power density is not less than 10% and not more than 50% of the steady-state target supplied electric power density.

3. The process for producing a photovoltaic device according to claim 2, wherein

a time for which the initial target supplied electric power density is applied is not less than 10% and not more than 30% of a total deposition time.

4. The process for producing a photovoltaic device according to claim 1, wherein

the deposition step comprises a transition stage for transitioning from an initial target supplied electric power density to a steady-state target supplied electric power density, and

a transition time for the transition stage is not less than 5% and not more than 10% of a total deposition time.

5. The process for producing a photovoltaic device according to claim 1, wherein the back electrode layer comprises a protective film.