PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS
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Abstract
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
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57 Claims
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1-18. -18. (canceled)
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19. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
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providing a substrate; forming a high-k dielectric layer having impurities therein;
the high-k dielectric layer being formed by a process that introduces the impurities into the high-k dielectric layer;annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer; and forming a gate layer upon the annealed high-k dielectric layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 57)
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38-56. -56. (canceled)
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