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Etch process for reducing silicon recess

  • US 20110318936A1
  • Filed: 06/29/2010
  • Published: 12/29/2011
  • Est. Priority Date: 06/29/2010
  • Status: Active Grant
First Claim
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1. A method for selectively etching a substrate, comprising:

  • disposing a substrate comprising a silicon nitride (SiNy) layer overlying silicon in a plasma etching system;

    transferring a pattern to said silicon nitride layer using a plasma etch process, wherein said plasma etch process utilizes a process gas composition having as incipient ingredients a process gas containing C, H and F, and an additive gas including CO2; and

    selecting an amount of said additive gas in said plasma etch process to achieve;

    (1) a silicon recess formed in said silicon having a depth less than 10 nanometers (nm), and (2) a sidewall profile in said pattern having an angular deviation from 90 degrees less than 2 degrees.

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