CONTROL APPARATUS FOR PLASMA IMMERSION ION IMPLANTATION OF A DIELECTRIC SUBSTRATE

• US 20120000421A1
• Filed: 07/02/2010
• Published: 01/05/2012
• Est. Priority Date: 07/02/2010
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Miller, Timothy, Singh, Vikram, Leavitt, Christopher J., Godet, Ludo
• Application Number:
  US12/829,794
• Publication Number:
  US 20120000421A1
• Time in Patent Office: Days
• US Class Current: 118/712
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 14/542 Controlling the film thickness or evaporation rate
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.

Claims

1. A plasma processing tool comprising:

a plasma chamber configured to generate a plasma having ions from a gas introduced into the chamber;

a platen configured to support and electrically connect to an insulator substrate for plasma doping, said platen connected to a voltage source supplying negative bias voltage pulses at a first potential to said platen and said substrate;

an electrode disposed above said generated plasma, said electrode receiving negative bias voltage pulses at a second potential, said second potential being greater than said first potential wherein said ions strike a surface of said electrode which generates secondary electrons, said secondary electrons accelerated toward said substrate at said second potential to neutralize charge build-up on said substrate.

2. The plasma processing tool of claim 1 further comprising:

a baffle disposed above said electrode a distance away from said platen; and

an insulating portion disposed between said baffle and said electrode to electrically isolate said electrode.

3. The plasma processing tool of claim 1 wherein said electrode is an electrode plate having a first surface, said surface directed toward said platen, said first surface having a profile configured to increase an incident angle associated with said ions on said electrode.

4. A method of neutralizing charge build-up on a surface of an insulator target substrate in a plasma processing tool comprising:

providing a reactive gas to a chamber;

exciting the reactive gas to generate a plasma having ions;

applying first bias voltage pulses to an insulator substrate disposed in said chamber;

applying second bias voltage pulses to an electrode disposed above said plasma, said second bias voltage pulses having a higher potential than said first bias voltage pulses to attract said ions toward said electrode;

generating secondary electrons when said attracted ions strike a surface of said electrode; and

accelerating said generated secondary electrons toward said insulator substrate to neutralize charge build-up present on a surface of said substrate.

5. The method of claim 4 wherein said second bias voltage pulses are negative and said first and second bias voltage pulses are synchronized.

6. The method of claim 4 wherein the secondary electrons are accelerated toward said insulator substrate at a potential corresponding to the second bias voltage pulses.

7. The method of claim 6 further comprising decelerating the secondary electrons before said secondary electrons reach the surface of said insulator substrate.

8. The method of claim 4 further comprising heating said electrode before applying the second bias voltage pulses.

9. The method of claim 4 further comprising distributing said reactive gas within said chamber via a baffle disposed above said insulator substrate, said electrode disposed on a side of said baffle directed toward the insulator substrate.

10. An apparatus for monitoring plasma immersion ion implantation comprising;

a plasma chamber configured to generate a plasma having ions from a gas introduced into the chamber;

a platen configured to support and electrically connect to an insulator substrate for implanting said ions therein, said platen connected to a voltage source supplying negative bias voltage pulses at a first potential to said platen and said substrate;

a shield ring disposed within said chamber contiguous with said platen, said shield ring electrically connected to said platen and biased at said first potential;

an insulator disposed on said shield ring;

a metal layer disposed on said insulator, said metal layer having a charge corresponding to a charge build-up of said substrate during implantation of said ions therein; and

a probe connected to said metal layer for measuring said charge build-up.

11. The apparatus of claim 10 further comprising an electrode disposed above said generated plasma, said electrode receiving negative bias voltage pulses at a second potential, said second potential being greater than said first potential to attract said ions from said plasma and generate secondary electrons which are accelerated toward said substrate at said second potential to neutralize charge build-up on said substrate.

12. A method for regulating surface voltage of an insulator substrate undergoing plasma immersion ion implantation comprising:

exciting a reactive gas to generate a plasma having ions within a plasma chamber;

monitoring the voltage of a surface of an insulator substrate disposed on a platen within the plasma chamber;

adjusting one of a plurality of parameters associated with an electrode disposed above the plasma generated within said chamber;

attracting ions from said generated plasma toward said electrode;

generating secondary electrons when said ions strike said electrode; and

directing said generated secondary electrons toward said substrate to regulate the voltage on the surface of said substrate.

13. The method of claim 12 wherein adjusting one of a plurality of parameters associated with an electrode comprises adjusting a bias voltage of said electrode;

14. The method of claim 12 wherein adjusting one of a plurality of parameters associated with an electrode comprises adjusting a width of a voltage pulse applied to said electrode.

15. The method of claim 12 further comprising applying a biasing voltage pulse to said insulator substrate, wherein adjusting one of a plurality of parameters associated with an electrode comprises adjusting the number of bias voltage pulses applied to said electrode during each of said pulse voltage pulses applied to said insulator substrate.