Microwave Plasma Processing Apparatus

• US 20120000610A1
• Filed: 07/01/2011
• Published: 01/05/2012
• Est. Priority Date: 07/02/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Jin Hyuk, Lee, Young dong, Han, Sang Chul, Kee, Jong Il, Lee, Guen Suk, Oh, Seung Hun
• Granted Patent: US 8,980,047 B2
• Time in Patent Office: Days
• US Class Current: 156/345.52
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

Claims

1. A plasma processing apparatus comprising:

a chamber configured to perform a plasma process;

an upper plate on the chamber;

an antenna under the upper plate, the antenna configured to generate plasma in the chamber;

an upper insulator between the upper plate and the antenna, the upper insulator covering a top of the antenna;

a lower insulator covering a bottom of the antenna;

an antenna support ring configured to fix the antenna to the upper plate; and

a metal gasket adhered to the antenna support ring.

2. The plasma processing apparatus according to claim 1, wherein

the antenna includes a flat plate antenna.

3. The plasma processing apparatus according to claim 1, wherein

the antenna includes a plurality of slots including a variety of shapes,

the plurality of slots defined by at least one inner surface of the antenna.

4. The plasma processing apparatus according to claim 2, wherein

the antenna includes a plurality of slots including a variety of shapes,

the plurality of slots defined by at least one inner surface of the antenna.

5. The plasma processing apparatus according to claim 1, wherein

the antenna includes a circumferential surface, and

a plurality of grooves defined by the circumferential surface.

6. The plasma processing apparatus according to claim 2, wherein

the antenna includes a circumferential surface, and

a plurality of grooves defined by the circumferential surface.

7. The plasma processing apparatus according to claim 1, wherein

the antenna support ring includes a plurality of protrusions along a circumferential surface of the antenna support ring.

8. The plasma processing apparatus according to claim 1, wherein

the metal gasket is configured to push the antenna up to maintain contact between the antenna and the upper plate.

9. The plasma processing apparatus according to claim 1, wherein

the metal gasket is configured to maintain electrical contact between the antenna and the antenna support ring.

10. The plasma processing apparatus according to claim 6, wherein

the metal gasket is configured to maintain electrical contact between the antenna and the antenna support ring.

11. The plasma processing apparatus according to claim 1, wherein

the chamber includes a susceptor,

the susceptor is configured to support a semiconductor wafer, and

the susceptor is connected to at least one of a heater and an electrode, the electrode configured to apply RF bias.

12. A main part for a plasma processing apparatus comprising:

a chamber;

an antenna support ring on the chamber;

an antenna on the antenna support ring, the antenna configured to generate a plasma in the chamber;

an insulator covering the antenna; and

an upper plate on the insulator, the upper plate fixed to the antenna by the antenna support ring.

13. The main part of claim 12, wherein

the antenna includes a flat plate shape,

the antenna includes a circumferential surface, and

the antenna includes a plurality of grooves defined by the circumferential surface.

14. The main part of claim 13, wherein

the antenna support ring includes a plurality of protrusions along a circumference of the antenna support ring,

the plurality of protrusions including a size that is smaller than a size of the plurality of grooves of the antenna,

the plurality of protrusions each define a coupling hole;

and

the main part further includes a plurality of coupling bolts inserted through the coupling holes and the plurality of protrusions,

each coupling bolt coupled to the protrusions and configured to fix the antenna to the upper plate.

15. The main part of claim 12, wherein

each protrusion is within each groove, and

a space is provided between each protrusion in each groove, based on the size of the protrusions being smaller than the size of the grooves.

16. The main part of claim 12, wherein

the antenna includes a plurality of slots including a variety of shapes, the plurality of slots defined by at least one inner surface of the antenna.

17. The main part of claim 12, further comprising:

at least one metal gasket adhered to the antenna support ring,

the metal gasket configured to maintain electrical contact between the antenna and the antenna support ring.

20. The antenna of claim 17, wherein

the plurality of grooves include a u-shape.

18. An antenna for a plasma processing apparatus, comprising:

a flat plate shape;

a plurality of grooves defined by a circumferential surface of the antenna, the plurality of grooves distributed along a circumference of the antenna.

19. The antenna of claim 18, further comprising:

a plurality of slots including a variety of shapes, the plurality of slots defined by at least one inner surface of the antenna.