SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a gate insulating layer;
a first gate electrode in contact with one surface of the gate insulating layer;
an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and
a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer,wherein a nitrogen concentration of the oxide semiconductor layer is 2×
1019 atoms/cm3 or lower, andwherein the source electrode and the drain electrode include at least one of tungsten, platinum, and molybdenum.
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Accused Products
Abstract
It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer, wherein a nitrogen concentration of the oxide semiconductor layer is 2×
1019 atoms/cm3 or lower, andwherein the source electrode and the drain electrode include at least one of tungsten, platinum, and molybdenum. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; a buffer layer and an oxide insulating layer which are in contact with the oxide semiconductor layer; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor layer with the buffer layer interposed therebetween, wherein a nitrogen concentration of the oxide semiconductor layer is 2×
1019 atoms/cm3 or lower,wherein a nitrogen concentration of the buffer layer is 2×
1019 atoms/cm3 or lower, andwherein the source electrode and the drain electrode include at least one of tungsten, platinum, and molybdenum. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification