SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE

• US 20120002090A1
• Filed: 06/28/2011
• Published: 01/05/2012
• Est. Priority Date: 07/01/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: AOKI, Takeshi, TAMURA, Hikaru, IKEDA, Takayuki, KUROKAWA, Yoshiyuki
• Granted Patent: US 9,473,714 B2
• Time in Patent Office: Days
• US Class Current: 348/297
• CPC Class Codes: G09G 2300/0876 Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
• CPC Class Codes: G09G 2310/0235 Field-sequential colour display
• CPC Class Codes: G09G 2320/0261 in the context of movement of objects on the screen or movement of the observer relative to the screen
• CPC Class Codes: G09G 3/3413 Details of control of colour illumination sources
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H04N 25/53 Control of the integration time
• CPC Class Codes: H04N 25/702 SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
• CPC Class Codes: H04N 25/766 comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

An object is to provide a solid-state imaging device or a semiconductor display device with which a high-quality image can be taken. By performing operation using a global shutter method, a potential for controlling charge accumulation operation can be shared by all pixels. In addition, a first photosensor group includes a plurality of photosensors connected to a wiring supplied with an output signal, and a second photosensor group includes a plurality of photosensors connected to another wiring supplied with the output signal. A wiring for supplying a potential or a signal for controlling charge accumulation operation to the first photosensor group is connected to a wiring for supplying the potential or signal to the second photosensor group.

Claims

1. A solid-state imaging device comprising:

a plurality of pixels, each of the plurality of pixels comprising;

a photodiode configured to generate current; and

an amplifier circuit configured to amplify an amount of charge determined by a value of current, thereby generating an output signal,

wherein the amplifier circuit comprises a transistor configured to hold the amount of charge determined by the value of current,

wherein one of a source and a drain of the transistor is electrically connected to the photodiode,

wherein the plurality of pixels comprise a first plurality of pixels connected to a first wiring supplied with a first output signal, and a second plurality of pixels connected to a second wiring supplied with a second output signal,

wherein the value of current is determined by an intensity of irradiation light, and

wherein a third wiring for supplying a potential to the first plurality of pixels for controlling accumulation of first charge is connected to a fourth wiring for supplying the potential to the second plurality of pixels.

2. The solid-state imaging device according to claim 1, wherein the transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and having a lower intrinsic carrier density than silicon.

3. The solid-state imaging device according to claim 2, wherein the semiconductor material is an oxide semiconductor.

4. The solid-state imaging device according to claim 3, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor.

5. The solid-state imaging device according to claim 3, wherein a hydrogen concentration of the channel formation region is 5×

10¹⁹/cm³ or less.

6. The solid-state imaging device according to claim 1, wherein an off-state current density of the transistor is 100 yA/μ

m or less.

7. A solid-state imaging device comprising:

a plurality of pixels, each of the plurality of pixels comprising;

a photodiode configured to generate current; and

an amplifier circuit configured to amplify an amount of charge determined by a value of current, thereby generating an output signal,

wherein the amplifier circuit comprises a transistor configured to hold the amount of charge determined by the value of current,

wherein one of a source and a drain of the transistor is electrically connected to the photodiode,

wherein the plurality of pixels comprise a first plurality of pixels connected to a first wiring supplied with a first output signal, and a second plurality of pixels connected to a second wiring supplied with a second output signal,

wherein the value of current is determined by an intensity of irradiation light, and

wherein a third wiring connected to an anode of a first photodiode included in the first plurality of pixels is connected to a fourth wiring connected to an anode of a second photodiode included in the second plurality of pixels.

8. The solid-state imaging device according to claim 7, wherein the transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and having a lower intrinsic carrier density than silicon.

9. The solid-state imaging device according to claim 8, wherein the semiconductor material is an oxide semiconductor.

10. The solid-state imaging device according to claim 9, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor.

11. The solid-state imaging device according to claim 9, wherein a hydrogen concentration of the channel formation region is 5×

10¹⁹/cm³ or less.

12. The solid-state imaging device according to claim 7, wherein an off-state current density of the transistor is 100 yA/μ

m or less.

13. A solid-state imaging device comprising:

a plurality of pixels, each of the plurality of pixels comprising;

a photodiode configured to generate current; and

an amplifier circuit configured to amplify an amount of charge determined by a value of current, thereby generating an output signal,

wherein the amplifier circuit comprises a transistor configured to hold the amount of charge determined by the value of current,

wherein one of a source and a drain of the transistor is electrically connected to the photodiode,

wherein the plurality of pixels comprise a first plurality of pixels connected to a first wiring supplied with a first output signal, and a second plurality of pixels connected to a second wiring supplied with a second output signal,

wherein the value of current is determined by an intensity of irradiation light, and

wherein a third wiring supplied with a first signal for controlling switching of a first transistor included in the first plurality of pixels is connected to a fourth wiring supplied with a second signal for controlling switching of a second transistor included in the second plurality of pixels.

14. The solid-state imaging device according to claim 13, wherein the transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and having a lower intrinsic carrier density than silicon.

15. The solid-state imaging device according to claim 14, wherein the semiconductor material is an oxide semiconductor.

16. The solid-state imaging device according to claim 15, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor.

17. The solid-state imaging device according to claim 15, wherein a hydrogen concentration of the channel formation region is 5×

10¹⁹/cm³ or less.

18. The solid-state imaging device according to claim 13, wherein an off-state current density of the transistor is 100 yA/μ

m or less.

19. A semiconductor display device comprising:

a plurality of pixels,

a photosensor and a display element included in each of the plurality of pixels, the photosensor comprising;

a photodiode configured to generate current; and

an amplifier circuit configured to amplify an amount of charge determined by a value of current, thereby generating an output signal,

wherein the amplifier circuit comprises a transistor configured to hold the amount of charge determined by the value of current,

wherein one of a source and a drain of the transistor is electrically connected to the photodiode,

wherein the plurality of pixels comprise a first plurality of pixels connected to a first wiring supplied with a first output signal, and a second plurality of pixels connected to a second wiring supplied with a second output signal,

wherein the value of current is determined by an intensity of irradiation light, and

wherein a third wiring for supplying a potential to the first plurality of pixels for controlling accumulation of first charge is connected to a fourth wiring for supplying the potential to the second plurality of pixels.

20. The semiconductor display device according to claim 19, wherein the transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and having a lower intrinsic carrier density than silicon.

21. The semiconductor display device according to claim 20, wherein the semiconductor material is an oxide semiconductor.

22. The semiconductor display device according to claim 21, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor.

23. The semiconductor display device according to claim 21, wherein a hydrogen concentration of the channel formation region is 5×

10¹⁹/cm³ or less.

24. The semiconductor display device according to claim 19, wherein an off-state current density of the transistor is 100 yA/μ

m or less.

25. A semiconductor display device comprising:

a plurality of pixels,

a photosensor and a display element included in each of the plurality of pixels, the photosensor comprising;

a photodiode configured to generate current; and

an amplifier circuit configured to amplify an amount of charge determined by a value of current, thereby generating an output signal,

wherein the amplifier circuit comprises a transistor configured to hold the amount of charge determined by the value of current,

wherein one of a source and a drain of the transistor is electrically connected to the photodiode,

wherein the plurality of pixels comprise a first plurality of pixels connected to a first wiring supplied with a first output signal, and a second plurality of pixels connected to a second wiring supplied with a second output signal,

wherein the value of current is determined by an intensity of irradiation light, and

wherein a third wiring connected to an anode of a first photodiode included in the first plurality of pixels is connected to a fourth wiring connected to an anode of a second photodiode included in the second plurality of pixels.

26. The semiconductor display device according to claim 25, wherein the transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and having a lower intrinsic carrier density than silicon.

27. The semiconductor display device according to claim 26, wherein the semiconductor material is an oxide semiconductor.

28. The semiconductor display device according to claim 27, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor.

29. The semiconductor display device according to claim 27, wherein a hydrogen concentration of the channel formation region is 5×

10¹⁹/cm³ or less.

30. The semiconductor display device according to claim 25, wherein an off-state current density of the transistor is 100 yA/μ

m or less.

31. A semiconductor display device comprising:

a plurality of pixels,

a photosensor and a display element included in each of the plurality of pixels, the photosensor comprising;

a photodiode configured to generate current; and

an amplifier circuit configured to amplify an amount of charge determined by a value of current, thereby generating an output signal,

wherein the amplifier circuit comprises a transistor configured to hold the amount of charge determined by the value of current,

wherein one of a source and a drain of the transistor is electrically connected to the photodiode,

wherein the plurality of pixels comprise a first plurality of pixels connected to a first wiring supplied with a first output signal, and a second plurality of pixels connected to a second wiring supplied with a second output signal,

wherein the value of current is determined by an intensity of irradiation light, and

wherein a third wiring supplied with a first signal for controlling switching of a first transistor included in the first plurality of pixels is connected to a fourth wiring supplied with a second signal for controlling switching of a second transistor included in the second plurality of pixels.

32. The semiconductor display device according to claim 31, wherein the transistor comprises, in a channel formation region, a semiconductor material having a wider band gap than silicon and having a lower intrinsic carrier density than silicon.

33. The semiconductor display device according to claim 32, wherein the semiconductor material is an oxide semiconductor.

34. The semiconductor display device according to claim 33, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor.

35. The semiconductor display device according to claim 33, wherein a hydrogen concentration of the channel formation region is 5×

10¹⁹/cm³ or less.

36. The semiconductor display device according to claim 31, wherein an off-state current density of the transistor is 100 yA/μ

m or less.