FABRICATION TOLERANT POLARIZATION CONVERTER

• US 20120002912A1
• Filed: 07/05/2010
• Published: 01/05/2012
• Est. Priority Date: 07/05/2010
• Status: Active Grant

• Current Assignee: Infinera Corp.
• Original Assignee: Infinera Corp.
• Inventors: Studenkov, Pavel V., Lal, Vikrant, Corzine, Scott
• Granted Patent: US 8,494,314 B2
• Time in Patent Office: Days
• US Class Current: 385/11
• CPC Class Codes: G02B 6/105 having optical polarisation effects

Abstract

The present invention provides a polarization converter, and a method for fabricating the same. The polarization converter includes a geometric shape which induces rotation of a polarization of an optical signal from a first polarization state to a second polarization state as the optical signal propagates along the polarization converter. The performance of the polarization converter is maintained in light of inconsistencies in fabrication processes resulting in improved manufacturability.

Claims

1. A waveguide, comprising:

a first semiconductor layer having a width and a length, first and second sides of the first semiconductor layer defining the width of the semiconductor layer;

a second semiconductor layer disposed adjacent to the first semiconductor layer, the second semiconductor layer having first and second sides each extending from the first side of the first semiconductor layer to the second side of the semiconductor layer, a first distance extending perpendicularly from the first side of the first semiconductor layer to the first side of the second semiconductor layer increasing along a first portion of the length of the first semiconductor layer, a second distance extending perpendicularly from the first side of the first semiconductor layer to the second side of the second semiconductor layer increasing along a second portion of the length of the first semiconductor layer.

2. The waveguide of claim 1, wherein the waveguide includes an input and an output, the waveguide is configured to receive light at the input, the waveguide inducing rotation of a polarization of the light from a first polarization state to a second polarization state as the light propagates along the length of the first semiconductor layer adjacent to the second semiconductor layer.

3. The waveguide of claim 2, wherein the first polarization state is one of a TE polarization state or a TM polarization state, and the second polarization state is the remaining one of the TE polarization state or the TM polarization state.

4. The waveguide of claim 2, wherein an electric field associated with the first polarization state has a first intensity at the input and a second intensity at the output, the first intensity being higher than the second intensity.

5. The waveguide of claim 1, wherein the first and second sides of the second semiconductor layer are substantially parallel.

6. The waveguide of claim 1, wherein the first and second sides of the second semiconductor layer are not parallel.

7. The waveguide of claim 5, wherein a line perpendicularly extending from the first side of the second semiconductor layer to the second side of the second semiconductor layer defines a width of the second semiconductor layer, the width being substantially constant along at least a portion of a length of the second semiconductor layer.

8. The waveguide of claim 7, wherein the width of the second semiconductor layer is less than the width of the first semiconductor layer.

9. The waveguide of claim 7, wherein the width of the second semiconductor layer is greater than the width of the first semiconductor layer.

10. The waveguide of claim 1, further comprising a substrate, the first and second semiconductor layers being provided on the substrate.

11. The waveguide of claim 10, wherein a first distance from the substrate to the first semiconductor layer is less than a second distance from the substrate to the second semiconductor layer.

12. The waveguide of claim 10, wherein a first distance from the substrate to the first semiconductor layer is greater than a second distance from the substrate to the second semiconductor layer.

19. The waveguide of claim 7, wherein the distance is greater than the width of the waveguide.

13. A waveguide having a width and a length, and first and second sides, the first and second sides defining the width of the waveguide, the waveguide comprising:

a substrate;

a semiconductor layer disposed on the substrate, a first portion of the semiconductor layer spaced from a second portion of the semiconductor layer along a portion of the length of the waveguide, each of the first and second portions of the semiconductor layer including a side which extends from the first side of the waveguide to the second side of the waveguide, a first distance extending perpendicularly from the first side of the waveguide to the side of the first portion of the semiconductor layer increasing along a first portion of the length waveguide, a second distance extending perpendicularly from the first side of the waveguide to the side of the second portion of the semiconductor layer increasing along a second portion of the length of the waveguide.

14. The waveguide of claim 13, wherein the waveguide includes an input and an output, the waveguide is configured to receive light at the input, the waveguide inducing rotation of a polarization of the light from a first polarization state to a second polarization state as the light propagates along the length of the semiconductor layer.

15. The waveguide of claim 14, wherein the first polarization state is one of a TE polarization state or a TM polarization state, and the second polarization state is the remaining one of the TE polarization state or the TM polarization state.

16. The waveguide of claim 13, wherein the side of the first portion of the semiconductor layer is substantially parallel to the side of the second portion of the semiconductor layer.

17. The waveguide of claim 15, wherein a line perpendicularly extending from the side of the first portion of the semiconductor layer to the side of the second portion of the semiconductor layer defines a distance, the distance being substantially constant along a portion of a length of the waveguide.

18. The waveguide of claim 17, wherein the distance is less than the width of the waveguide.

20. A method of making a waveguide, comprising:

depositing a first semiconductor layer having a width and a length, first and second sides of the first semiconductor layer defining the width of the semiconductor layer;

depositing a second semiconductor layer adjacent the first semiconductor;

masking off the second semiconductor layer to define an exposed area on the second semiconductor layer;

etching the exposed area to further define the second semiconductor layer, the second semiconductor layer having first and second sides each extending from the first side of the first semiconductor layer to the second side of the semiconductor layer, a first distance extending perpendicularly from the first side of the first semiconductor layer to the first side of the second semiconductor layer increasing along a first portion of the length of the first semiconductor layer, a second distance extending perpendicularly from the first side of the first semiconductor layer to the second side of the second semiconductor layer increasing along a second portion of the length of the first semiconductor layer.

21. The method of claim 20, further comprising the step of disposing a layer of cladding material over the first and second semiconductor layers.

22. The method of claim 21, wherein the cladding material is constructed of a material selected from a group consisting of silica, lower index silicon oxynitride, lower index silicon oxycarbide, indium gallium arsenide phosphide, polymers, and combinations thereof.

23. The method of claim 20, wherein each of the first and second semiconductor layers is constructed of a material selected from a group consisting of silicon, silicon nitride, silicon oxynitride, silicon oxycarbide, germanium doped silica, indium phosphide, gallium arsenide, high index polymers, and combinations thereof.