PROCESS FOR PRODUCING MULTILAYERED GAS-BARRIER FILM

• US 20120003500A1
• Filed: 02/15/2010
• Published: 01/05/2012
• Est. Priority Date: 02/16/2009
• Status: Abandoned Application

• Current Assignee: Mitsubishi Plastics Incorporated (Mitsubishi Chemical Holdings Corporation)
• Original Assignee: Mitsubishi Plastics Incorporated (Mitsubishi Chemical Holdings Corporation)
• Inventors: Yoshida, Shigenobu, Okawara, Chiharu, Ozeki, Kota
• Application Number:
  US13/201,543
• Publication Number:
  US 20120003500A1
• Time in Patent Office: Days
• US Class Current: 428/688
• CPC Class Codes: B05D 1/62 Plasma-deposition of organic layers plasma deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 2252/02 of indefinite length
• CPC Class Codes: B05D 2350/60 Adding a layer before coating
• CPC Class Codes: B05D 7/56 Three layers or more
• CPC Class Codes: C09D 5/00 Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced electrically insulating plastics, resins or waxes H01B3/30; Filling pastes
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: C23C 14/562 for coating elongated substrates
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: C23C 28/00 Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D

Abstract

Provided are a method for producing a film, which is satisfactory in productivity, exhibits high gas-barrier property immediately after production, and has excellent adhesive strength between constituent layers while maintaining the excellent gas-barrier property, and a gas-barrier film, which is obtained by the method. The method for producing a gas-barrier film includes the steps of; (1) forming an inorganic thin film by a vacuum deposition method on at least one surface of a base film; (2) forming a thin film by a plasma CVD method on the inorganic thin film formed in the step (1); and (3) forming an inorganic thin film by the vacuum deposition method on the thin film formed in the step (2), in which each of the steps (1) and (3), and the step (2) are sequentially carried out at a pressure of 1×10⁻⁷ to 1 Pa, and at a pressure of 1×10⁻³ to 1×10² Pa, respectively.

Claims

1. A method for producing a gas-barrier film, comprising:

(1) forming an inorganic thin film by a vacuum deposition method on at least one surface of a base film;

(2) forming a second thin film by a plasma CVD method on the inorganic thin film formed in (1); and

(3) forming a third inorganic thin film by the vacuum deposition method on the second thin film formed in (2), wherein each of (1) and (3), and (2) are sequentially carried out at a pressure of 1×

10<sup>−

7</sup> to 1 Pa, and at a pressure of 1×

10<sup>−

3</sup> to 1×

10² Pa, respectively.

2. The method for producing a gas-barrier film according to claim 1, wherein the pressure in each of (1) and (3) is lower than the pressure in (2).

3. The method for producing a gas-barrier film according to claim 1, wherein a ratio of the pressure in (2) to the pressure in each of (1) and (3) (the pressure in (2)/the pressure in each of (1) and (3)) is 10 to 1×

10⁷.

4. The method for producing a gas-barrier film according to claim 1, wherein (2) and (3) are repeated once to three times.

5. The method for producing a gas-barrier film according to claim 1, wherein (1) to (3) are carried out in the same vacuum chamber.

6. The method for producing a gas-barrier film according to claim 1, wherein the thin film obtained by the plasma CVD method in (2) comprises at least one compound selected from the group consisting of an inorganic material, an inorganic oxide, and an inorganic nitride.

7. The method for producing a gas-barrier film according to claim 1, wherein each of the thin films formed by the vacuum deposition method comprises SiOx₁ where x₁ satisfies 1.2≦

x₁≦

1.9, the thin film formed by the plasma CVD method comprises SiOx₂ where x₂ satisfies 1.5≦

x₂≦

2.5 and a relationship 0.3≦

x₂−

x₁≦

1.3 is satisfied.

8. The method for producing a gas-barrier film according to claim 1, wherein the thin film obtained by the plasma CVD method in (2) comprises at least one resin selected from the group consisting of a polyester-based resin, a urethane-based resin, an acrylic resin, an epoxy-based resin, a nitrocellulose-based resin, a silicon-based resin, an isocyanate-based resin, and a poly-p-xylylene resin.

9. The method for producing a gas-barrier film according to claim 1, further comprising forming, on the base film, an anchor coat layer including at least one resin selected from the group consisting of a polyester-based resin, a urethane-based resin, an acrylic resin, a nitrocellulose-based resin, a silicon-based resin, and an isocyanate-based resin.

10. The method for a gas-barrier film according to claim 1, further comprising providing a protection layer as an uppermost layer.

11. The method for producing a gas-barrier film according to claim 10, wherein the protection layer comprises at least one resin selected from the group consisting of polyvinyl alcohol, ethylene vinyl alcohol, and an ethylene-unsaturated carboxylic acid copolymer.

15. A gas-barrier film, which is obtained by the production method according to claim 1.

12. A gas-barrier film, comprising:

a base film;

(A) an inorganic thin film formed by a vacuum deposition method on at least one surface of the base film; and

(B) at least one constituent unit layer including thin films formed successively by a plasma CVD method and the subsequent vacuum deposition method on the inorganic thin film (A), arranged in the stated order.

13. The gas-barrier film according to claim 12, wherein the layer (A) and the layer (B) are sequentially obtained in the same vacuum chamber under reduced pressure.

14. The gas-barrier film according to claim 12, wherein each of the thin films formed by the vacuum deposition method comprises SiOx₁ where x₁ satisfies 1.2≦

x₁≦

1.9, the thin film formed by the plasma CVD method comprises SiOx₂ where x₂ satisfies 1.5≦

x₂≦

2.5, and a relationship 0.3≦

x₂−

x₁≦

1.3 is satisfied.