SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
First Claim
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1. A method for fabricating semiconductor substrate, comprising:
- providing a first semiconductor substrate, which includes a detaching layer spaced from an upper surface of the first semiconductor substrate;
forming an ion-implanted layer proximate to an edge of the detaching layer;
bonding a second semiconductor substrate to the first semiconductor substrate;
forming a crack in the ion-implanted layer in response to applying stress to the ion-implanted layer; and
detaching a portion of the first semiconductor substrate in response to cleaving through the crack.
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Abstract
A method of fabricating a semiconductor substrate includes providing a first semiconductor substrate, which includes a detaching layer spaced from an upper surface of the first semiconductor substrate; forming an ion-implanted layer proximate to an edge of the detaching layer; bonding a second semiconductor substrate to the first semiconductor substrate; forming a crack in the ion-implanted layer in response to applying stress to the ion-implanted layer; and detaching a portion of the first semiconductor substrate in response to cleaving through the crack.
230 Citations
20 Claims
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1. A method for fabricating semiconductor substrate, comprising:
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providing a first semiconductor substrate, which includes a detaching layer spaced from an upper surface of the first semiconductor substrate; forming an ion-implanted layer proximate to an edge of the detaching layer; bonding a second semiconductor substrate to the first semiconductor substrate; forming a crack in the ion-implanted layer in response to applying stress to the ion-implanted layer; and detaching a portion of the first semiconductor substrate in response to cleaving through the crack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for fabricating semiconductor device, comprising:
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providing a first semiconductor substrate, which includes a detaching layer proximate to a pre-defined depth from a surface of the first semiconductor substrate; forming an ion-implanted layer proximate to the edge of the detaching layer; bonding a second semiconductor substrate to the surface of the first semiconductor substrate, wherein the second semiconductor substrate includes a semiconductor device and an isolation layer which covers the semiconductor device; applying stress to the ion-implanted layer; cleaving through the ion-implanted layer to remove a portion of the first semiconductor substrate; and forming a second semiconductor device on the portion of the first semiconductor substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification