Method of manufacturing glass substrate and method of manufacturing electronic components

• US 20120006060A1
• Filed: 07/07/2011
• Published: 01/12/2012
• Est. Priority Date: 07/08/2010
• Status: Active Grant

• Current Assignee: Seiko Instruments Incorporated (Seiko Group)
• Original Assignee: Seiko Instruments Incorporated (Seiko Group)
• Inventors: Terao, Eiji
• Granted Patent: US 8,656,736 B2
• Time in Patent Office: Days
• US Class Current: 65/41
• CPC Class Codes: H01L 21/4803 Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks H01L21/4846 takes precedence; printed circuit boards H05K1/00
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 23/055 the leads having a passage through the base H01L23/057 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A plurality of via-holes are formed in panel-shaped glass, and a plurality of via-holes are formed in two bases. Then, the panel-shaped glass is interposed between the two bases, positions of a plurality of the via-holes of the bases and a plurality of the via-holes of the panel-shaped glass are aligned, wires made of a conductive material are penetrated, and the wires between the two bases are stretched. Then, the panel-shaped glass is heated to a point higher than a softening point of the glass, the wires between the bases are buried by the glass, and the glass is cooled to form a glass ingot having the buried wires. Then, the ingot is sliced to form a glass substrate, the glass panel is polished to expose the wires on front and rear surfaces as the through electrodes.

Claims

1. A method of manufacturing a glass substrate with through electrodes, the method comprising:

a glass via-hole formation process in which a plurality of via-holes are formed in panel-shaped glass;

a base via-hole formation process in which a plurality of via-holes are formed in two bases;

a wire stretching process in which the panel-shaped glass is interposed between the two bases, positions of a plurality of the via-holes of the bases and a plurality of the via-holes of the panel-shaped glass are aligned, a plurality of conductive wires are penetrated through a plurality of the via-holes, and the wires between the two bases are stretched;

a wire burying process in which the panel-shaped glass is heated to a temperature higher than a softening point of the glass, and the wires between the bases are buried by the glass;

an ingot formation process in which a glass ingot having the buried wires is formed by cooling the glass;

a slicing process in which a glass panel is formed by slicing the ingot; and

a polishing process in which a plurality of the wires are exposed on front and rear surfaces by polishing the glass panel to provide the through electrode.

2. The method according to claim 1, wherein the glass via-hole formation process includes:

a recess formation process in which a recess is formed in the panel-shaped glass, and

a grinding process in which the recess is penetrated to a rear surface side by grinding the rear surface opposite to a front surface where the recess is formed.

3. The method according to claim 1, wherein the wire burying process is a process of applying compression stress to the panel-shaped glass.

4. The method according to claim 1, wherein, in the wire stretching process, a plurality of the wires are stretched between two bases by penetrating a plurality of the wires through a single via-hole of the panel-shaped glass such that a plurality of the via-holes formed in the bases are matched with a single via-hole formed in the panel-shaped glass.

5. The method according to claim 1, wherein in the ingot formation process, a cooling rate from a temperature 50°

C. higher than the distortion point of the glass substrate to a temperature 50°

C. lower than the distortion point thereof is configured to be slower than a cooling rate to a temperature 50°

C. higher than the distortion point thereof.

6. The method according to claim 1, wherein a thermal expansion coefficient of the wire is substantially equal to that of the glass.

7. A method of manufacturing an electronic component, the method comprising:

a base substrate formation process in which the glass substrate is formed based on the method of manufacturing the glass substrate according to claim 1, and an electrode is formed in the glass substrate to provide a base substrate;

a mounting process in which an electronic component is mounted on the base substrate; and

a bonding process in which a lid substrate is bonded to the base substrate having the mounted electronic component.