METHOD FOR MANUFACTURING DISPLAY DEVICE
First Claim
1. A semiconductor device comprising:
- a gate electrode and a first electrode on an insulating surface;
a first insulating film over the gate electrode and the first electrode;
a semiconductor layer over the first insulating film;
a source region and a drain region over the semiconductor layer;
a source electrode and a drain electrode over the source region or the drain region;
a second insulating film over the source electrode and the drain electrode;
an opening portion in the second insulating film; and
a pixel electrode over the second insulating film,wherein the pixel electrode is connected to the drain electrode via the opening portion; and
wherein the first electrode, the semiconductor layer and the drain region overlap with the opening portion of the second insulating film.
1 Assignment
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Accused Products
Abstract
A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
9 Citations
10 Claims
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1. A semiconductor device comprising:
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a gate electrode and a first electrode on an insulating surface; a first insulating film over the gate electrode and the first electrode; a semiconductor layer over the first insulating film; a source region and a drain region over the semiconductor layer; a source electrode and a drain electrode over the source region or the drain region; a second insulating film over the source electrode and the drain electrode; an opening portion in the second insulating film; and a pixel electrode over the second insulating film, wherein the pixel electrode is connected to the drain electrode via the opening portion; and wherein the first electrode, the semiconductor layer and the drain region overlap with the opening portion of the second insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification