ID CHIP AND IC CARD

• US 20120007096A1
• Filed: 09/21/2011
• Published: 01/12/2012
• Est. Priority Date: 03/04/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei
• Granted Patent: US 9,449,999 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/0728 the arrangement being an optical or sound-based communication interface
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/145 at least one of the further markings being adapted for galvanic or wireless sensing, e.g. an RFID tag with both a wireless and an optical interface or memory, or a contact type smart card with ISO 7816 contacts and an optical interface or memory
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 31/147 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: Y10S 257/923 with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Abstract

The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.

Claims

1. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage, and

wherein the conductive layer, the light-emitting element and the light-receiving element are electrically connected to the circuit.

2. The semiconductor device according to claim 1, wherein the light-receiving element has a layer for conducting photoelectric conversion using a non-single crystal thin film, and

wherein the light-emitting element has an electroluminescent layer using a non-single crystal thin film.

3. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage, and

wherein the circuit, the light-emitting element and the light-receiving element are formed on a same substrate.

4. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage, and

wherein the conductive layer, the circuit, the light-emitting element and the light-receiving element are formed on a same substrate.

5. A semiconductor device comprising:

a circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by a radio wave, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit, and

wherein the circuit, the light-emitting element and the light-receiving element are formed on a same substrate.

6. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the conductive layer, the light-emitting element and the light-receiving element are electrically connected to the circuit,

wherein the circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage generated by the conductive layer.

7. The semiconductor device according to claim 6, wherein the substrate is a plastic substrate.

8. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the conductive layer, the light-emitting element and the light-receiving element are electrically connected to the circuit,

wherein the circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage generated by the conductive layer.

9. A semiconductor device comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the conductive layer, the light-emitting element and the light-receiving element are electrically connected to the circuit,

wherein the conductive layer, the circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent, and

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage generated by the conductive layer.

10. A semiconductor device comprising:

a circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by a radio wave, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit,

wherein the circuit, the light-emitting element and the light-receiving element are formed integrally, and

wherein the circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent.

11. An IC card comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the conductive layer, the light-emitting element and the light-receiving element are electrically connected to the circuit,

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage generated by the conductive layer, and

wherein the circuit, the light-emitting element and the light-receiving element are formed on a same substrate.

12. The IC card according to claim 11, wherein the conductive layer, the circuit, the light-emitting element and the light-receiving element are formed on the same substrate.

13. An IC card comprising:

a circuit;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the circuit comprises a connection terminal, a rectification circuit configured to rectify an alternating voltage generated by a radio wave, a power supply circuit configured to generate a power supply voltage by using a voltage outputted from the rectification circuit, a demodulation circuit, and a logic circuit, and

wherein the circuit, the light-emitting element and the light-receiving element are formed on a first substrate.

14. The IC card according to claim 13, wherein the circuit, the light-emitting element and the light-receiving element are attached to a second substrate with an adhesive agent.

15. The IC card according to claim 14, wherein the second substrate is a plastic substrate.

16. An IC card comprising:

a conductive layer configured to generate an alternating voltage based on receiving a radio wave;

a circuit comprising a transistor;

a light-receiving element configured to receive a signal by optical communication; and

a light-emitting element configured to transmit a signal by optical communication,

wherein the conductive layer, the light-emitting element and the light-receiving element are electrically connected to the circuit,

wherein the circuit, the light-emitting element and the light-receiving element are attached to a substrate with an adhesive agent,

wherein the circuit includes a power supply circuit configured to generate a power supply voltage from the alternating voltage generated by the conductive layer.

17. The IC card according to claim 16, wherein the conductive layer and the circuit in addition to the light-emitting element and the light-receiving element are attached to the substrate with an adhesive agent.

18. The IC card according to claim 16, wherein the substrate is a plastic substrate.