SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20120007101A1
• Filed: 07/08/2011
• Published: 01/12/2012
• Est. Priority Date: 07/08/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: YANG, Jong-in, KIM, Tae-hyung, LEE, Si-hyuk, SONG, Sang-yeob, SONE, Cheol-soo, KIM, Hak-hwan, LEE, Jin-hyun
• Granted Patent: US 8,872,205 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Claims

1. A semiconductor light-emitting device comprising:

a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate; and

a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer,

wherein the first electrode layer is filled in a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer to be electrically connected to the first semiconductor layer,

wherein the insulating layer disposes on an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

2. The semiconductor light-emitting device of claim 1, wherein the contact hole comprises a plurality of contact holes, and each of the plurality of the contact holes is filled with the first electrode layer.

3. The semiconductor light-emitting device of claim 1, further comprises an insulating layer formed on an outer circumferential surface of the second contact to insulate at least the second contact and the first electrode layer.

4. The semiconductor light-emitting device of claim 1, wherein the second electrode layer is a reflective layer that reflects light generated by the active layer.

5. The semiconductor light-emitting device of claim 4, wherein the second electrode layer comprises at least one material selected from the group consisting of silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), palladium (Pd), titanium (Ti), gold (Au), iridium (Ir), tungsten (W), stannum (Sn), an oxide thereof, and a mixture thereof.

6. The semiconductor light-emitting device of claim 1, wherein the substrate comprises any one material selected from the group consisting of alumina, aluminum nitride, sapphire, and polymer.

7. The semiconductor light-emitting device of claim 1, wherein the substrate is a conductive substrate, and the device further comprising an insulating layer formed on inner circumferential surfaces of through-holes in which the first contact and the second contact are formed and on a surface of the substrate.

8. The semiconductor light-emitting device of claim 7, wherein the substrate comprises any one selected from the group consisting of silicon (Si), germanium (Ge), and Si containing aluminum (Al).

9. A semiconductor light-emitting device comprising:

a first electrode layer, a first insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate;

a first electrode pad that is formed on a portion of the first electrode layer;

a second insulating layer that is formed on a remaining portion of the first electrode layer;

a second electrode pad that is formed on the second electrode layer to extend toward the second insulating layer; and

a first contact that passes through the substrate to be electrically connected to the first electrode pad, and a second contact that passes through the substrate to be electrically connected to the second electrode layer,

wherein the first electrode layer is filled in a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer to be electrically connected to the first semiconductor layer,

and the first insulating layer disposes on an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

10. The semiconductor light-emitting device of claim 9, wherein the contact hole comprises a plurality of the contact holes, and each of the plurality of contact holes is filled with the first electrode layer.

11. The semiconductor light-emitting device of claim 9, wherein the second electrode layer is a reflective layer that reflects light generated by the active layer.

12. The semiconductor light-emitting device of claim 11, wherein the second electrode layer comprises at least one material selected from the group consisting Ag, Al, Pt, Ni, Pd, Ti, Au, Ir, W, Sn, an oxide thereof, and a mixture thereof.

13. The semiconductor light-emitting device of claim 9, wherein the substrate comprises any one material selected from the group consisting of alumina, aluminum nitride, sapphire, and polymer.

14. The semiconductor light-emitting device of claim 9, wherein the substrate is a conductive substrate, and a third insulating layer is formed on inner circumferential surfaces of through-holes in which the first contact and the second contact are formed and on a surface of the substrate.

15. The semiconductor light-emitting device of claim 14, wherein the substrate comprises any one selected from the group consisting of Si, Ge, and Si containing Al, and gallium nitride (GaN).

16. A method of manufacturing a semiconductor light-emitting device, the method comprising:

sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a first substrate;

forming a contact hole through which the first semiconductor layer is exposed from the second semiconductor layer, and forming a contact layer in the contact hole to be connected to the first semiconductor layer;

forming a second electrode layer on the second semiconductor layer to surround the contact hole;

forming a first insulating layer on the second electrode layer;

forming a first electrode layer on the first insulating layer to be connected to the contact layer;

adhering a second substrate to the first electrode layer and removing the first substrate;

forming a first through-hole that is connected to the first electrode layer and a second through-hoe that is connected to the second electrode layer from an exposed surface of the second substrate; and

forming a first contact and a second contact that are respectively connected to the first electrode layer and the second electrode layer by filling the first through-hole and the second through-hole with metals.

17. The method of claim 16, wherein the forming of the contact hole further comprises:

forming a second insulating layer that covers the contact hole; and

exposing the first semiconductor layer by etching a portion of the second insulating layer formed on a bottom of the contact hole,

and the forming of the contact layer comprises forming the contact layer on the exposed first semiconductor layer.

18. The method of claim 16, wherein the forming of the contact hole and the contact layer comprises forming a plurality of contact holes and a plurality of contact layers.

19. The method of claim 18, wherein the forming of the second electrode layer comprises:

forming a third insulating layer on the second semiconductor layer;

exposing the second semiconductor layer by removing the third insulating layer that surrounds the contact hole; and

forming the second electrode layer on the exposed second semiconductor layer.

20. The method of claim 16, wherein the second electrode layer comprises at least one material selected from the group consisting of Ag, Al, Pt, Ni, Pd, Ti, Au, Ir, W, Sn, an oxide thereof, and a mixture thereof.

21. The method of claim 16, wherein the forming of the first electrode layer comprises:

etching the first insulating layer to expose the contact layer; and

forming the first electrode layer to cover the exposed contact layer.

22. The method of claim 16, wherein the forming of the second through-hole further comprises forming a fourth insulating layer on an inner circumferential surface of the second through-hole.

23. The method of claim 16, wherein the second substrate is a non-conductive substrate comprises any one material selected from the group consisting of alumina, aluminum nitride, sapphire, and polymer.

24. A method of manufacturing a semiconductor light-emitting device, the method comprising:

sequentially stacking a first semiconductor layer, an active layer, and a second semiconductor layer on a first substrate;

forming a contact hole through which the first semiconductor layer is exposed from the second semiconductor layer, and forming a contact layer in the contact hole to be connected to the first semiconductor layer;

forming a second electrode layer on the second semiconductor layer to surround the contact hole;

forming a first insulating layer on the second electrode layer;

forming a first electrode layer on the first insulating layer to be connected to the contact layer;

forming a first through-hole in a second substrate to be connected to the first electrode layer, and a second through-hole in the second substrate to be connected to the second electrode layer;

forming a first contact and a second contact that are respectively connected to the first electrode layer and the second electrode layer by filling the first through-hole and the second through-hole with metals; and

forming a third contact that is connected to the second electrode layer from an exposed surface of the first electrode layer and is insulated from the first electrode layer;

adhering the second substrate to the first electrode layer such that the third contact contacts the second contact; and

removing the first substrate.

25. The method of claim 24, further comprising forming a second insulating layer on inner circumferential surfaces of the first through-hole and the second through-hole and on a surface of the second substrate.

26. The method of claim 25, wherein the second substrate comprises any one selected from the group consisting of Si, Ge, Si containing Al, and GaN.

27. The method of claim 24, wherein the forming of the contact hole comprises:

forming a third insulating layer to cover the contact hole; and

exposing the first semiconductor layer by etching a portion of the third insulating layer formed on a bottom of the contact hole,

and the forming of the contact layer comprises forming the contact layer on the exposed first semiconductor layer.

28. The method of claim 24, wherein the forming of the contact hole and the contact layer comprises forming a plurality of contact holes and a plurality of contact layers.

29. The method of claim 27, wherein the forming of the second electrode layer comprises:

forming a fourth insulating layer on the second semiconductor layer;

exposing the second semiconductor layer by removing a portion of the fourth insulating layer that surrounds the contact hole; and

forming the second electrode layer on the exposed second semiconductor layer.

30. The method of claim 24, wherein the second electrode layer comprises at least one material selected from the group consisting of Ag, Al, Pt, Ni, Pd, Ti, Au, Ir, W, Sn, an oxide there of, and a mixture thereof.

31. The method of claim 24, wherein the forming of the first electrode layer comprises:

etching the first insulating layer to expose the contact layer; and

forming the first electrode layer to cover the exposed contact layer.

32. A method of manufacturing a semiconductor light-emitting device, the method comprising:

sequentially forming a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode layer on a first substrate;

forming a contact hole through which the first semiconductor layer is exposed from the second electrode layer;

forming a first insulating layer on the second electrode layer to cover an inner circumferential surface of the contact hole;

exposing the first semiconductor layer by etching a bottom of the contact hole;

forming a first electrode layer on the first insulating layer to contact the exposed first semiconductor layer;

adhering a second substrate to the first electrode layer and removing the first substrate;

forming a first through-hole connected to the first electrode layer and a second through-hole connected to the second electrode layer from an exposed surface of the second substrate; and

forming a first contact and a second contact respectively connected to the first electrode layer and the second electrode layer by filling the first through-hole and the second through-hole with metals.

33. The method of claim 32, wherein the forming of the contact hole comprises forming a plurality of contact holes.

34. The method of claim 32, wherein the second electrode layer comprises at least one material selected from the group consisting of Ag, Al, Pt, Ni, Pd, Ti, Au, Ir, W, Sn, an oxide there of, and a mixture thereof.

35. The method of claim 32, wherein the forming of the second through-hole comprises forming a second insulating layer on an inner circumferential surface of the second through-hole.

36. The method of claim 32, wherein the second substrate is a non-conductive substrate comprising any one material selected from the group consisting of alumina, aluminum nitride, and sapphire.

37. The method of claim 32, further comprising forming a second insulating layer on inner circumferential surfaces of the first through-hole and the second through-hole and on a surface of the second substrate.

38. The method of claim 37, wherein the second substrate is a conductive substrate comprising any one selected from the group consisting of Si, Ge, Si containing Al, and GaN.

39. The method of claim 32, wherein the forming of the contact hole comprises forming a plurality of contact holes.

40. The method of claim 32, wherein the second electrode layer comprises at least one material selected from the group consisting of Ag, Al, Pt, Ni, Pd, Ti, Au, Ir, W, Sn, an oxide thereof, and a mixture thereof.

41. A method of manufacturing a semiconductor light-emitting device, the method comprising:

sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a first substrate;

forming a contact hole through which the first semiconductor layer is exposed from the second semiconductor layer, and forming a contact layer in the contact hole to be connected to the first semiconductor layer;

forming a second electrode layer on the second semiconductor layer to surround the contact hole;

forming a first insulating layer on the second electrode layer;

forming a first electrode layer on the first insulating layer to be connected to the contact layer in a second region other than a first region of the second electrode layer;

forming a second insulating layer to cover the first electrode layer;

forming a second electrode pad connected to the second electrode layer in the first region on the second insulating layer;

forming a first electrode pad in the second region to be spaced apart from the second electrode pad and to be connected to the first electrode layer;

forming a first contact and a second contact in a second substrate by filling through-holes spaced apart from each other in the second substrate with metals; and

adhering the second substrate to the first contact and the second contact such that the first electrode pad and the second electrode pad are respectively connected to the first contact and the second contact.

42. The method of claim 41, further comprising forming a third insulating layer on inner circumferential surfaces of the through-holes and on a surface of the second substrate.

43. The method of claim 41, wherein the second substrate comprises any one selected from the group consisting of Si, Ge, Si containing Al, and GaN.

44. The method of claim 41, wherein the forming of the contact hole comprises:

forming a fourth insulating layer to cover the contact hole; and

exposing the first semiconductor layer by etching a portion of the fourth insulating layer formed on a bottom of the contact hole,

and the forming of the contact layer comprises forming the contact layer on the exposed first semiconductor layer.

45. The method of claim 42, wherein the forming of the contact hole and the contact layer comprises forming a plurality of contact holes and a plurality of contact layers.

46. The method of claim 45, wherein the forming of the second electrode layer comprises:

forming a fifth insulating layer on the second semiconductor layer;

exposing the second semiconductor layer by removing a portion of the fifth insulating layer that surrounds the contact hole; and

forming the second electrode layer on the exposed second semiconductor layer.

47. The method of claim 41, wherein the second electrode layer comprises at least one material selected from the group consisting of Ag, Al, Pt, Ni, Pd, Ti, Au, Ir, W, Sn, an oxide thereof, and a mixture thereof.

48. The method of claim 41, wherein the forming of the first electrode layer comprises:

etching the first insulating layer to expose the contact layer; and

forming the first electrode layer to cover the exposed contact layer.

49. A method of manufacturing a semiconductor light-emitting device, the method comprising:

sequentially forming a first semiconductor layer, an active layer, a second semiconductor layer, and a second electrode layer on a first substrate;

forming a contact hole through which the first semiconductor layer is exposed from the second electrode layer;

forming a first insulating layer on the second electrode layer to cover an inner circumferential surface of the contact hole;

exposing the first semiconductor layer by etching a portion of the first insulating layer formed on a bottom of the contact hole;

forming a first electrode layer on the first insulating layer to be connected to the contact layer in a second region other than a first region of the second electrode layer;

forming a second insulating layer to cover the first electrode layer;

forming a second electrode pad connected to the second electrode layer in the first region on the second insulating layer;

forming a first electrode pad in the second region to be spaced apart from the second electrode pad and to be connected to the first electrode layer;

forming a first contact and a second contact in a second substrate by filling through-holes spaced apart from each other in the second substrate with metals; and

adhering the second substrate to the first contact and the second contact such that the first contact and the second contact are respectively connected to the first electrode pad and the second electrode pad.

50. A semiconductor light-emitting device comprising:

a semiconductor structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer;

a first electrode layer and a second electrode layer that are disposed on the second semiconductor layer and are respectively electrically connected to the first semiconductor layer and the second semiconductor layer;

an insulating layer that is formed on a top surface of the semiconductor structure to insulate the first electrode layer and the second electrode layer;

a plating electrode layer that comprises a first electrode pad disposed on the first electrode layer and a second electrode pad disposed on the second electrode layer; and

an insulating barrier that is disposed between the first electrode pad and the second electrode pad.

51. The semiconductor light-emitting device of claim 50, wherein the first electrode layer covers a top of at least one contact hole to be electrically connected to the first semiconductor layer through the at least one contact hole that is formed from passing through the second semiconductor layer and the active layer to the first semiconductor layer.

52. The semiconductor light-emitting device of claim 51, wherein the insulating layer extends to be formed on a side wall of the at least one contact hole so that the first electrode layer is insulated from the second semiconductor layer.

53. A semiconductor light-emitting device comprising:

a semiconductor structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer;

a first electrode layer and a second electrode layer that are disposed on the second semiconductor layer and are respectively connected to the first semiconductor layer and the second semiconductor layer;

a first insulating layer that is formed on a top surface of the semiconductor structure and insulates the first electrode layer and the second electrode layer;

a second insulating layer that covers the first insulating layer, the first electrode layer, and the second electrode layer and exposes a first region of the second electrode layer and a second region of the first electrode layer;

a first metal layer that is connected to the first electrode layer in the second region;

a second metal layer that is connected to the first electrode layer in the first region;

a plating electrode layer that comprises a first electrode pad that is disposed on the first metal layer and a second electrode pad that is disposed on the second metal layer; and

an insulating barrier that is disposed between the first electrode pad and the second electrode pad.

54. The semiconductor light-emitting device of claim 53, wherein the first electrode layer is electrically connected to the first semiconductor layer through at least one contact hole that is formed passing through the second semiconductor layer and the active layer to the first semiconductor layer, and the first metal layer is formed to be connected to the first electrode layer filled in the at least one contact hole.

55. The semiconductor light-emitting device of claim 54, wherein the first insulating layer extends to be formed on a side wall of the at least one contact hole so that the first electrode layer is insulated from the second semiconductor layer.

56. A method of manufacturing a semiconductor light-emitting device, the method comprising:

forming a semiconductor structure by stacking a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate;

forming a first electrode layer and a second electrode layer on a top surface of the semiconductor structure to be respectively electrically connected to the first semiconductor layer and the second semiconductor layer;

coating an insulating layer that exposes a part of a region where the first electrode layer is located and a part of a region where the second electrode layer is located;

forming a first electrode pad and a second electrode pad by plating a first electrode region through which the first electrode layer is exposed and a second electrode region through which the second electrode layer is exposed;

forming an insulating barrier by filling an insulating material in a boundary region between the first electrode pad and the second electrode pad; and

removing the substrate.

57. The method of claim 56, wherein the forming of the first electrode layer and the second electrode layer comprises:

forming at least one contact hole from the second semiconductor layer to the first semiconductor layer;

forming a passivation layer on the second semiconductor layer and the at least one contact hole;

exposing a portion of the first semiconductor layer by removing a portion of the passivation layer located on a bottom of the at least one contact hole;

forming a first electrode layer on the exposed portion of the first semiconductor layer;

removing a portion of the passivation layer other than a portion that surrounds the first electrode layer on the second semiconductor layer; and

forming a second electrode layer on an exposed area by the removing the portion of the passivation layer.

58. The method of claim 57, wherein the coating of the insulating layer comprises:

coating an insulating layer on entire top surfaces of the first electrode layer, the second electrode layer, and the semiconductor structure; and

removing a portion of the insulating layer where the first electrode layer and the second electrode layer are located.

59. The method of claim 58, wherein the forming of the first electrode pad and the second electrode pad comprises:

forming a photoresist in a boundary region between the first electrode region and the second electrode region;

forming the first electrode pad and the second electrode pad by performing plating with the photoresist therebetween; and

removing the photoresist.

60. The method of claim 59, wherein the forming of the first electrode pad and the second electrode pad further comprises forming a seed layer on the first electrode region and the second electrode region for performing the plating.

61. The method of claim 56, further comprising planarizing top surfaces of the first electrode, the second electrode, and the insulating barrier.

62. The method of claim 56, wherein the semiconductor structure is formed by stacking gallium nitride-based semiconductor layers.

63. The method of claim 56, wherein the substrate is a sapphire substrate.

64. A method of manufacturing a semiconductor light-emitting device, the method comprising:

forming a semiconductor structure by stacking a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate;

forming a first electrode layer and a second electrode layer on a top surface of the semiconductor structure to be respectively electrically connected to the first semiconductor layer and the second semiconductor layer;

forming a first insulating layer that exposes a part of a region where the first electrode layer is located and a part of a region where the second electrode layer is located;

forming a second insulating layer that covers the first insulating layer, the first electrode layer, and the second electrode layer;

exposing a first region where the first electrode layer is located and a second region where the second electrode layer is located by etching the second insulating layer;

respectively forming a first metal layer and a second metal layer in the first region and the second region;

respectively forming a first electrode pad and a second electrode pad by plating the first metal layer and the second metal layer;

forming an insulating barrier by filling an insulating material in a boundary region between the first electrode pad and the second electrode pad; and

removing the substrate.

65. The method of claim 64, wherein the forming of the first electrode layer and the second electrode layer comprises:

forming at least one contact hole from the second semiconductor layer to the first semiconductor layer;

forming a passivation layer on the second semiconductor layer and the at least one contact hole;

exposing a portion of the first semiconductor layer by removing a portion of the passivation layer formed on a bottom of the at least one contact hole;

forming a first electrode layer on the exposed portion of the first semiconductor layer;

removing a portion of the passivation layer on the second semiconductor layer other than a portion that surrounds the first electrode layer; and

forming a second electrode layer on a portion exposed by the removing of the portion of the passivation layer.

66. The method of claim 64, wherein the coating of the first insulating layer comprises:

coating a first insulating layer on entire top surfaces of the first electrode layer, the second electrode layer, and the semiconductor structure; and

removing a portion of the first insulating layer where the first electrode layer and the second electrode layer are located.

67. The method of claim 66, wherein the forming of the first electrode pad and the second electrode pad comprises:

forming a photoresist in a boundary region between the first electrode region and the second electrode region;

forming the first electrode pad and the second electrode pad by performing plating with the photoresist therebetween; and

removing the photoresist.

68. The method of claim 67, wherein the forming of the first electrode pad and the second electrode pad further comprises forming a seed layer on the first electrode region and the second electrode region for performing the plating.

69. The method of claim 64, further comprising planarizing top surfaces of the first electrode, the second electrode, and the insulating barrier.

70. The method of claim 64, wherein the semiconductor structure is formed by stacking gallium nitride-based semiconductor layers.

71. The method of claim 64, wherein the substrate is a sapphire substrate.