MICROMACHINED OFFSET REDUCTION STRUCTURES FOR MAGNETIC FIELD SENSING

• US 20120007597A1
• Filed: 07/09/2010
• Published: 01/12/2012
• Est. Priority Date: 07/09/2010
• Status: Abandoned Application

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Invensense Incorporated (TDK Corporation)
• Inventors: Seeger, Joseph, Lo, Chiung C.
• Application Number:
  US12/833,622
• Publication Number:
  US 20120007597A1
• Time in Patent Office: Days
• US Class Current: 324/244
• CPC Class Codes: G01R 33/0011 comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A micromachined magnetic field sensor integrated with electronics is disclosed. The magnetic field sensors utilize Hall-effect sensing mechanisms to achieve 3-axis sensing. A Z axis sensor can be fabricated either on a device layer or on a conventional IC substrate with the design of conventional horizontal Hall plates. An X and Y axis sensor are constructed on the device layer. In some embodiments, a magnetic flux concentrator is applied to enhance the performance of the magnetic field sensor. In some embodiments, the magnetic field sensors are placed on slope sidewalls to achieve 3-axis magnetic sensing system. In some embodiments, a stress isolation structure is incorporated to lower the sensor offset. The conventional IC substrate and device layer are connected electrically to form a 3-axis magnetic sensing system. The magnetic field sensor can also be integrated with motion sensors that are constructed in the similar technology.

Claims

1. A micromachining magnetic sensing device comprises:

a magnetic sensor, and

a stress isolation structure comprising separations between the magnetic sensor and a bulk layer.

2. The sensing device of claim 1 wherein the separations are formed by micromachining reactive ion etching.

3. The sensing device of claim 1 wherein the separations are formed by micromachining wet etching.

4. The sensing device of claim 1 wherein the separations are formed by wafer saw wherein only the layer 1 is sawed through and not the layer 2 during dicing the magnetic sensing device.

5. The sensing device of claim 1 wherein the separations are formed vertically through bonding the magnetic sensors to the bulk layer with bonding agents.

6. The sensing device of claim 1, wherein a buffer material is deposited to planarize the topography of the surface.

7. The sensing device of claim 1, whereon a buffer material is deposited to decouple the magnetic sensor from an encapsulation layer.

8. The sensing device of claim 1, wherein the magnetic sensor comprises III-V compound material.

9. The sensing device of claim 1, where the terminals are connected to a conventional IC substrate comprising signal processing circuitry via bonding agents.

10. The sensing device of claim 8 wherein the bonding agents are wirebonds and metal bonding pads.

11. The sensing device of claim 8 wherein the bonding agents are interconnect layers for wafer level bonding.

12. The sensing device of claim 10 wherein bonding agents are patterned thin films of germanium layer, which is bonded to the at least one patterned aluminum layer on the conventional IC substrate.

13. The sensing device of claim 8 further comprises a magnetic sensing element on the conventional IC substrate.

14. The sensing device of claim 8 further comprises compliant structures forming electrically connections between the bonding agents and terminals of the magnetic sensor.

15. The sensing device of claim 1 further comprises compliant structures to provide mechanical support between the magnetic sensor and the bulk layer.

16. The sensing device of claim 1 further comprises a cover substrate to protect the magnetic sensor from damages and interferences.

17. The sensing device of claim 1 wherein the magnetic sensor comprises any of a a Hall effect type sensor;

a Lorentz effect type sensor;

a magnetoresistive sensor;

a magneto-diode sensor;

a magneto-transistor;

a fluxgate;

a magneto-impedance sensor;

a magneto-optical sensor and a MAGFET.

18. A method for providing magnetic field sensor comprises

providing a magnetic sensor, and

providing a stress isolation structure comprising separations between the magnetic sensor and a bulk layer.

19. The method of claim 18 wherein the separations are formed by micromachining reactive ion etching.

20. The method of claim 18 wherein the separations are formed by micromachining wet etching.

21. The method of claim 18 wherein the separations are formed by wafer saw wherein only the layer 1 is sawed through and not the layer 2 during dicing the magnetic sensing device.

22. The method of claim 18 wherein the separations are formed vertically through bonding the magnetic sensors to the bulk layer with bonding agents.

23. The method of claim 18, wherein a buffer material is deposited to planarize the topography of the surface.

24. The method of claim 18, whereon a buffer material is deposited to decouple the magnetic sensor from an encapsulation layer.

25. The method of claim 18, wherein the magnetic sensor comprises III-V compound material.

26. The method of claim 18, where the terminals are connected to a conventional IC substrate comprising signal processing circuitry via bonding agents.

27. The method of claim 26 wherein the bonding agents are wirebonds and metal bonding pads.

28. The method of claim 26 wherein the bonding agents are interconnect layers for wafer level bonding.

29. The method of claim 28 wherein bonding agents are patterned thin films of germanium layer, which is bonded to the at least one patterned aluminum layer on the conventional IC substrate.

30. The method of claim 26 further comprises a magnetic sensing element on the conventional IC substrate.

31. The method of claim 26 further comprises compliant structures forming electrically connections between the bonding agents and terminals of the magnetic sensor.

32. The method of claim 18 further comprises compliant structures to provide mechanical support between the magnetic sensor and the bulk layer.

33. The method of claim 18 further comprises a cover substrate to protect the magnetic sensor from damages and interferences.

34. The method of claim 18 wherein the magnetic sensor comprises any of a Hall effect type sensor;

a Lorentz effect type sensor;

a magnetoresistive sensor;

a magneto-diode sensor;

a magneto-transistor;

a fluxgate;

a magneto-impedance sensor;

a magneto-optical sensor and a MAGFET.