DISPLAY DEVICE, METHOD FOR MANUFACTURING THE SAME AND APPARATUS FOR MANUFACTURING THE SAME

• US 20120009698A1
• Filed: 09/16/2011
• Published: 01/12/2012
• Est. Priority Date: 09/10/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nakamura, Osamu, Moriya, Yoshitaka
• Granted Patent: US 8,371,891 B2
• Time in Patent Office: Days
• US Class Current: 438/26
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/13 using printing techniques, e.g. ink-jet printing or screen printing
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 71/50 Forming devices by joining two substrates together, e.g. lamination techniques

Abstract

The present inventions provides a method for manufacturing a film-type display device efficiently, and a method for manufacturing a large-size film-type display device, and an apparatus for manufacturing the film-type display device. An apparatus for manufacturing a film-type display device includes: transferring means for transferring a substrate over which an integrated circuit constituting the display device is provided; first separating means for separating the integrated circuit from the substrate by adhering a first sheet material to one surface of the integrated circuit; second separating means for separating the integrated circuit from the first sheet material by adhering a second sheet material to the other surface of the integrated circuit; processing means for forming one or both of a conductive film and an insulating film on the integrated circuit; and sealing means for sealing the processed integrated circuit with the second sheet material and a third sheet material.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an element over a substrate;

attaching a first sheet over the element while transferring the element;

separating the substrate from the element while transferring the element;

attaching a second sheet under the element while transferring the element after separating the substrate;

separating the first sheet from the element while transferring the element after attaching the second sheet;

processing the element after separating the first sheet; and

attaching a third sheet over the element while transferring the element after processing the element.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the element includes a thin film transistor.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the third sheet includes a resin.

4. A method for manufacturing a semiconductor device according to claim 1, further comprising a step of retrieving the substrate into a cassette after separating the substrate from the element.

5. A method for manufacturing a semiconductor device according to claim 1, wherein the processing step includes forming a light emitting layer over the element by a droplet discharging method.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming an element over a substrate;

attaching a first sheet over the element while transferring the element;

separating the substrate from the element while transferring the element;

attaching a second sheet under the element while transferring the element after separating the substrate;

separating the first sheet from the element while transferring the element after attaching the second sheet;

processing the element after separating the first sheet;

attaching a third sheet over the element while transferring the element after processing the element; and

reeling the element onto a correction roll after attaching the third sheet.

7. A method for manufacturing a semiconductor device according to claim 6, wherein the element includes a thin film transistor.

8. A method for manufacturing a semiconductor device according to claim 6, wherein the third sheet includes a resin.

9. A method for manufacturing a semiconductor device according to claim 6, further comprising a step of retrieving the substrate into a cassette after separating the substrate from the element.

10. A method for manufacturing a semiconductor device according to claim 6, wherein the processing step includes forming a light emitting layer over the element by a droplet discharging method.

11. A method for manufacturing a semiconductor device, comprising the steps of:

forming an element over a substrate;

attaching a first sheet over the element while transferring the element;

separating the substrate from the element while transferring the element;

attaching a second sheet under the element while transferring the element after separating the substrate;

separating the first sheet from the element while transferring the element after attaching the second sheet;

processing the element after separating the first sheet;

attaching a third sheet over the element while transferring the element after processing the element; and

cutting the third sheet and the second sheet.

12. A method for manufacturing a semiconductor device according to claim 11, wherein the element includes a thin film transistor.

13. A method for manufacturing a semiconductor device according to claim 11, wherein the third sheet includes a resin.

14. A method for manufacturing a semiconductor device according to claim 11, further comprising a step of retrieving the substrate into a cassette after separating the substrate from the element.

15. A method for manufacturing a semiconductor device according to claim 11, wherein the processing step includes forming a light emitting layer over the element by a droplet discharging method.