SWITCHING ELEMENT
First Claim
1. A switching element of LCDs or organic EL displays which uses a thin film transistor device comprising:
- a drain electrode;
a source electrode;
a channel layer contacting the drain electrode and the source electrode;
wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than
6) in a crystallized state, andthe channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·
sec) and an electron carrier concentration is less than 1018/cm3;
a gate electrode; and
a gate insulating film positioned between the gate electrode and the channel layer.
1 Assignment
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Accused Products
Abstract
A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
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Citations
3 Claims
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1. A switching element of LCDs or organic EL displays which uses a thin film transistor device comprising:
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a drain electrode; a source electrode; a channel layer contacting the drain electrode and the source electrode; wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than
6) in a crystallized state, andthe channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·
sec) and an electron carrier concentration is less than 1018/cm3;a gate electrode; and a gate insulating film positioned between the gate electrode and the channel layer. - View Dependent Claims (2, 3)
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Specification