Recessed Pillar Structure

• US 20120012997A1
• Filed: 07/13/2010
• Published: 01/19/2012
• Est. Priority Date: 07/13/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Shen, Wen-Wei, Chuang, Yao-Chun, Chen, Chen-Shien, Chen, Ming-Fa
• Granted Patent: US 8,241,963 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0239 Material of the redistribution layers
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05083 Three-layer arrangements
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05582 Two-layer coating
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05681 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/10126 Bump collar
• CPC Class Codes: H01L 2224/10156 Bump collar
• CPC Class Codes: H01L 2224/1145 : Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/11452 : Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/11462 : Electroplating
• CPC Class Codes: H01L 2224/11474 : Multilayer masks
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/11903 : using different masks
• CPC Class Codes: H01L 2224/1308 : being stacked
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13564 : Only on the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/13566 : Both on and outside the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/1357 : Single coating layer
• CPC Class Codes: H01L 2224/13582 : Two-layer coating
• CPC Class Codes: H01L 2224/13583 : Three-layer coating
• CPC Class Codes: H01L 2224/13639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13664 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/13684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/16148 : the bump connector connecting to a bonding area protruding from the surface
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81898 : Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

A bump structure that may be used to interconnect one substrate to another substrate is provided. A recessed conductive pillar is formed on a first substrate such that the recessed conductive pillar has a recess formed therein. The recess may be filled with a solder material. A conductive pillar on a second substrate may be formed having a contact surface with a width less than or equal to a width of the recess. The first substrate may be attached to the second substrate such that the conductive pillar on the second substrate is positioned over or in the recess of the first substrate. The substrates may each be an integrated circuit die, an interposer, a printed circuit board, a high-density interconnect, or the like.

Claims

1. A device comprising:

a first substrate having a contact;

an under bump metallization (UBM) structure in electrical contact with the contact; and

a recessed conductive pillar over and in electrical contact with the UBM structure, the recessed conductive pillar having a recess formed therein, the recess having substantially vertical sidewalls.

2. The device of claim 1, further comprising solder material in the recess.

3. The device of claim 2, wherein the solder material comprises SnPb, SnAg, SnAgCu, a high-Pb material, a Sn-based solder, a lead-free solder, or a combination thereof.

4. The device of claim 1, wherein the recess has a depth of about 3 μ

m.

5. The device of claim 1, further comprising a second substrate, the second substrate having a second conductive pillar, the second substrate being attached to the first substrate such that the second conductive pillar is positioned laterally within the recess in the recessed conductive pillar on the first substrate.

6. The device of claim 5, wherein the second conductive pillar is inserted into the recess.

7. The device of claim 5, wherein the second conductive pillar is positioned horizontally above the recessed conductive pillar.

8. The device of claim 5, wherein the second conductive pillar has a trapezoidal shape.

9. The device of claim 5, wherein at least one of the first substrate and the second substrate is an integrated circuit die and the other substrate is an interposer, packaging substrate, high-density interconnect, or printed circuit board.

10. The device of claim 5, wherein the first substrate is a first integrated circuit die and the second substrate is a second integrated circuit die.

11. A method of forming a device, the method comprising:

providing a first substrate having a conductive pad formed thereon;

forming a conductive pillar on the first substrate, the conductive pillar being in electrical contact with the conductive pad; and

forming a recess in a top surface of the conductive pillar, thereby forming a recessed conductive pillar.

12. The method of claim 11, further comprising forming a solder material in the recess.

13. The method of claim 12, wherein the solder material comprises SnPb, SnAg, SnAgCu, a high-Pb material, a Sn-based solder, a lead-free solder, or a combination thereof.

14. The method of claim 11, wherein the recess has a depth of about 3 μ

m.

15. The method of claim 11, further comprising providing a second substrate, the second substrate having a second conductive pillar, the second substrate being attached to the first substrate such that the second conductive pillar is positioned above the recess in the recessed conductive pillar on the first substrate.

16. The method of claim 15, wherein the second conductive pillar is inserted into the recess.

17. The method of claim 15, wherein the second conductive pillar is positioned above the recessed conductive pillar.

18. The method of claim 15, wherein the second conductive pillar has a trapezoidal shape.

19. The method of claim 15, wherein at least one of the first substrate and the second substrate is an integrated circuit die and the other substrate is an interposer, packaging substrate, high-density interconnect, or printed circuit board.

20. The method of claim 15, wherein the first substrate is a first integrated circuit die and the second substrate is a second integrated circuit die.