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Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating

  • US 20120014180A1
  • Filed: 09/27/2011
  • Published: 01/19/2012
  • Est. Priority Date: 10/24/2007
  • Status: Active Grant
First Claim
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1. A method of operating a semiconductor storage device comprising a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory, and a floating gate or trapping layer for storing data as non-volatile memory, the method comprising:

  • reading and storing data to the floating bodies as volatile memory while power is applied to the device;

    transferring the data stored in the floating bodies, by a parallel, non-algorithmic process, to the floating gates or trapping layers corresponding to the floating bodies, when power to the device is interrupted; and

    storing the data in the floating gates or trapping layers as non-volatile memory.

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