DEFECT DETECTION SYSTEM AND METHOD

• US 20120016600A1
• Filed: 09/10/2010
• Published: 01/19/2012
• Est. Priority Date: 07/15/2010
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Wang, Chun-Chieh, SU, Jui-Yiao, Chung, Yu-Liang, Wu, Chien-Feng, Liu, Yan-Chen
• Granted Patent: US 8,712,704 B2
• Time in Patent Office: Days
• US Class Current: 702/36
• CPC Class Codes: G01N 2291/014 Resonance or resonant frequency
• CPC Class Codes: G01N 2291/023 Solids
• CPC Class Codes: G01N 2291/0289 Internal structure, e.g. defects, grain size, texture
• CPC Class Codes: G01N 29/12 by measuring frequency or resonance of acoustic waves measuring frequency or resonant frequency of mechanical vibrations or acoustic waves in general G01H1/06, G01H3/04, G01H13/00; acoustic resonators G10K11/04; vibration or shock testing of structures G01M7/00
• CPC Class Codes: G01N 29/46 by spectral analysis, e.g. Fourier analysis or wavelet analysis spectral signal processing per se G06F17/14

Abstract

A defect detection system and method enable a fastened crystalline silicon product to generate micro-vibration by a micro-vibration excitation device, so as to enable the crystalline silicon product to generate an excitation signal, then to acquire the excitation signal by a acquisition device, so as to analyze the excitation signal acquired by the acquisition device in the time and frequency domain by an analysis detection device with a specific analysis, and to obtain an analysis result, at last, determine a defect state of the crystalline silicon product according to the analysis result.

Claims

1. A defect detection method for detecting a crystalline silicon product, comprising the steps of:

(a) enabling the crystalline silicon product to generate micro-vibration, so as to generate an excitation signal;

(b) acquiring the excitation signal generated from the crystalline silicon product; and

(c) performing a time-frequency analysis with respect to the acquired excitation signal, so as to generate an analysis result.

2. The defect detection method of claim 1, further comprising a step (d) of determining a defect state of the crystalline silicon product according to the analysis result.

3. The defect detection method of claim 1, wherein step (a) enables the crystalline silicon product to generate more than once micro-vibrations with different directions in a predetermined time, so as to enable the crystalline silicon product to generate the excitation signal in the predetermined time.

4. The defect detection method of claim 1, wherein step (b) further comprises recording the acquired excitation signal.

5. The defect detection method of claim 1, wherein in step (c) the time-frequency analysis is performed by a short-time Fourier transform method, a continuous wavelet transform method, or a Hilbert-Huang transform approach with respect to the acquired excitation signal, so as to obtain time-, frequency-, and energy-change results of the excitation signal.

6. The defect detection method of claim 2, wherein in step (c) the time-frequency analysis is performed by a short-time Fourier transform method, a continuous wavelet transform method, or a Hilbert-Huang transform approach with respect to the acquired excitation signal, so as to obtain time-, frequency-, and energy-change results of the excitation signal;

and in step (d) the defect state which comprises judgment of defect size, defect position, defect quantity, and/or defect alignment of the crystalline silicon product, is determined according to whether or not pulse surges are present in the time- frequency-, and energy-change results of the excitation signal.

7. The defect detection method of claim 6, wherein step (d) is performed to characterize the time-, frequency-, and energy-change results of the excitation signal and to analyze the change results by an artificial intelligence algorithm, so as to determine the defect state of the crystalline silicon product.

8. The defect detection method of claim 7, wherein the step of characterizing the time-, frequency-, and energy-change results of the excitation signal is performed in a grid form.

9. The defect detection method of claim 1, further comprising a step (e) of displaying the defect state by a specific device.

10. A defect detection system for detecting a crystalline silicon product, comprising:

a fastening device for fastening the crystalline silicon product;

a micro-vibration excitation device for enabling the fastened crystalline silicon product to generate micro-vibration, so as to enable the crystalline silicon product to generate an excitation signal;

an acquisition device for acquiring the excitation signal; and

an analysis detection device for performing a time-frequency analysis with respect to the acquired excitation signal by a specific analysis, so as to generate an analysis result.

11. The defect detection system of claim 10, further comprising an isolation device for isolating the fastening device, the micro-vibration excitation device, and the acquisition device, so as to enable the acquisition device to acquire the excitation signal under no interference or low interference environment.

12. The defect detection system of claim 10, further comprising a display device for displaying a defect state of the crystalline silicon product.

13. The defect detection system of claim 10, further comprising a steering device for performing direction change with respect to the fastening device, wherein the fastening device enables the fastened crystalline silicon product to generate more than once micro-vibrations with different directions by the steering device in a predetermined time, so as to generate the excitation signal.

14. The defect detection system of claim 10, further comprising a steering device for performing direction change with respect to the micro-vibration excitation device, wherein the micro-vibration excitation device enables the fastened crystalline silicon product to generate more than once micro-vibrations with different directions by the steering device in a predetermined time, so as to generate the excitation signal.

15. The defect detection system of claim 10, wherein the analysis detection device further comprises a record module for recording the excitation signal acquired by the acquisition device and/or the analysis result generated by the analysis detection device.

16. The defect detection system of claim 10, wherein the analysis detection device performs a time-frequency analysis by a short-time Fourier transform method, a continuous wavelet transform method, or a Hilbert-Huang transform approach with respect to the excitation signal acquired by the acquisition device, so as to obtain time-, frequency-, and energy-change results of the excitation signal.

17. The defect detection system of claim 16, wherein the analysis detection device further characterizes the time-, frequency-, and energy-change results of the excitation signal by a gridding method, and analyzes the change results by an artificial intelligence algorithm, so as to determine a defect state of the crystalline silicon product.

18. The defect detection system of claim 10, wherein the fastening device comprises a clamping member and/or a suction member, so as to hold the crystalline silicon product by the clamping member and/or the suction member.

19. The defect detection system of claim 10, wherein the micro-vibration excitation device is a pneumatic nozzle, an ultrasonic producer, and/or an acoustic resonator.

20. The defect detection system of claim 10, wherein the crystalline silicon product is a thin substrate.

21. The defect detection system of claim 10, wherein the excitation signal is a vibration signal.

22. The defect detection system of claim 10, wherein the analysis detection device further determines a defect state of the crystalline silicon product according to the analysis result.