METHOD FOR FORMING ANTENNA STRUCTURE

• US 20120017427A1
• Filed: 12/15/2010
• Published: 01/26/2012
• Est. Priority Date: 07/26/2010
• Status: Active Grant

• Current Assignee: Wistron NeWeb Corporation (Wistron Corporation)
• Original Assignee: Wistron NeWeb Corporation (Wistron Corporation)
• Inventors: Hsu, Hsin-Hui, Lo, Wen-Kuei, Chang, Sheng-Chieh, Huang, Bau-Yi, Tsai, Chi-Wen, Wang, Tzuh-Suan
• Granted Patent: US 8,176,621 B2
• Time in Patent Office: Days
• US Class Current: 29/600
• CPC Class Codes: H01Q 1/243 with built-in antennas
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 9/04 Resonant antennas
• CPC Class Codes: Y10T 29/49002 Electrical device making
• CPC Class Codes: Y10T 29/49016 Antenna or wave energy "plumbing" making

Abstract

A method for forming an antenna structure is provided, including the following steps of: providing a non-conductive frame and disposing a plating resist material on the non-conductive frame, removing a part of the plating resist material within a predetermined region on the non-conductive frame and forming a roughened surface on the non-conductive frame within the predetermined region by laser marking, forming a medium layer on the roughened surface, wherein the medium layer comprises Pd or Ag, removing the plating resist material on the non-conductive frame, and forming a metal layer on the medium layer.

Claims

1. A method for forming an antenna structure, comprising:

providing a non-conductive frame and disposing a plating resist material on the non-conductive frame;

removing a part of the plating resist material within a predetermined region on the non-conductive frame and forming a roughened surface on the non-conductive frame within the predetermined region by laser marking;

forming a medium layer on the roughened surface, wherein the medium layer comprises Pd;

removing the plating resist material on the non-conductive frame; and

forming a metal layer on the medium layer.

2. The method as claimed in claim 1, wherein the metal layer is formed on the medium layer by electroless deposition.

3. The method as claimed in claim 1, wherein the medium layer comprises Pb/Sn colloid or AgNO₃.

4. The method as claimed in claim 1, wherein the plating resist material comprises resin.

5. The method as claimed in claim 1, wherein the non-conductive frame is immersed in the plating resist material to form a resist layer on the non-conductive frame.

6. The method as claimed in claim 1, wherein the plating resist material is sprayed on the non-conductive frame to form a resist layer on the non-conductive frame.

7. The method as claimed in claim 1, wherein the plating resist material is daubed on the non-conductive frame to form a resist layer on the non-conductive frame.

8. The method as claimed in claim 1, wherein the metal layer comprises Cu.

9. The method as claimed in claim 1, wherein the metal layer comprises Ni.

10. The method as claimed in claim 1, wherein the non-conductive frame comprises plastic material integrally formed by injection molding.

11. The method as claimed in claim 1, wherein the plating resist material is removed after forming the metal layer on the medium layer.

12. The method as claimed in claim 1, wherein the plating resist material is removed before forming the metal layer on the medium layer.