Device structure and manufacturing method using HDP deposited using deposited source-body implant block
First Claim
1. A method for manufacturing a trenched semiconductor power device comprising:
- opening a plurality of trenches from a top surface of a semiconductor substrate and forming a gate insulation layer on sidewalls and bottom surface of said trenches; and
forming an implanting-ion block above said top surface in a mesa area at a distance away from said trenches for blocking body implanting ions and source ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced.
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Abstract
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
19 Citations
24 Claims
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1. A method for manufacturing a trenched semiconductor power device comprising:
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opening a plurality of trenches from a top surface of a semiconductor substrate and forming a gate insulation layer on sidewalls and bottom surface of said trenches; and forming an implanting-ion block above said top surface in a mesa area at a distance away from said trenches for blocking body implanting ions and source ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A trenched semiconductor power device comprising a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near said top surface above a drain region disposed on a bottom surface of a substrate, wherein said semiconductor power device further comprising:
an implanting-ion block disposed above said top surface on a mesa area next to said body region having a thickness substantially for blocking body implanting ions from entering into said substrate under said mesa area whereby masks for manufacturing said semiconductor power device can be reduced; and - View Dependent Claims (19, 20, 21, 22, 23)
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24. A trenched power semiconductor power device comprising:
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a high-density plasma (HDP) deposited thick oxide layer disposed on a bottom surface of a trenched gate having a thickness greater than a gate oxide layer padding sidewalls of said trenched gate; and implanting-ion blocks comprising HDP oxide layer having a thickness larger than 0.3 micron formed simultaneously with said HDP deposited thick oxide layer disposed on said bottom surface of said trenched gate.
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Specification