Solid-State Thin-Film Capacitor
First Claim
1. A solid-state thin-film capacitor device comprising:
- a semiconductor substrate having a first surface;
a thin-film capacitor comprising a first electrode layer, a dielectric layer and a second electrode layer;
the first electrode layer disposed upon the first surface and comprising a transition metal;
the dielectric layer disposed upon the first electrode layer and comprising an oxide of a transition metal;
the second electrode layer disposed upon the dielectric layer and comprising an oxide of a transition metal, wherein the dielectric layer is disposed between the first electrode layer and the second electrode layer; and
an electrical circuit element positioned within the semiconductor substrate and enclosed by the semiconductor substrate and the first electrode layer, whereby the thin-film capacitor extends from the first surface of the semiconductor substrate and the electrical circuit element is enclosed by the thin-film capacitor and the semiconductor substrate.
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Accused Products
Abstract
Solid-state thin-film capacitors are provided. Aspects of the solid-state thin-film capacitors include a first electrode layer of a transition metal, a dielectric layer of an oxide of the transition metal, and a second electrode layer of a metal oxide. Also provided are methods of making the solid-state thin-film capacitors, as well as devices that include the same. The capacitor may have one or more cathodic arc produced structures, i.e., structures produced using a cathodic arc deposition process. The structures may be stress-free metallic structures, porous layers and layers displaying crenulations. Aspects of the invention further include methods of producing capacitive structures using chemical vapor deposition and/or by sputter deposition.
18 Citations
26 Claims
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1. A solid-state thin-film capacitor device comprising:
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a semiconductor substrate having a first surface; a thin-film capacitor comprising a first electrode layer, a dielectric layer and a second electrode layer; the first electrode layer disposed upon the first surface and comprising a transition metal; the dielectric layer disposed upon the first electrode layer and comprising an oxide of a transition metal; the second electrode layer disposed upon the dielectric layer and comprising an oxide of a transition metal, wherein the dielectric layer is disposed between the first electrode layer and the second electrode layer; and an electrical circuit element positioned within the semiconductor substrate and enclosed by the semiconductor substrate and the first electrode layer, whereby the thin-film capacitor extends from the first surface of the semiconductor substrate and the electrical circuit element is enclosed by the thin-film capacitor and the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of forming a solid-state thin-film capacitor comprising:
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a. providing a semiconductor substrate presenting at least one electrical circuit element; b. depositing a first electrode layer upon a first surface of the semiconductor substrate, the first surface comprising a transition metal; c. depositing a dielectric layer disposed upon the first electrode layer, the dielectric layer comprising an oxide of a transition metal; and d. depositing a second electrode layer disposed upon the dielectric layer, the second electrode layer comprising an oxide of a transition metal, and wherein the dielectric layer is disposed between the first electrode layer and the second electrode layer, and comprising a first electrode layer, a dielectric layer and a second electrode layer form the thin-film capacitor, and the thin film capacitor and the semiconductor substrate in combination enclosing the electric circuit element. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification