SYSTEM AND METHOD FOR CONTROLLING PLASMA DEPOSITION UNIFORMITY

• US 20120021136A1
• Filed: 07/20/2010
• Published: 01/26/2012
• Est. Priority Date: 07/20/2010
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Dzengeleski, Joseph P., Gammel, George M., Miller, Timothy J.
• Application Number:
  US12/840,057
• Publication Number:
  US 20120021136A1
• Time in Patent Office: Days
• US Class Current: 427/523
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/3266 Magnetic control means

Abstract

A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate.

Claims

1. A process uniformity control apparatus comprising:

a plasma chamber defined by chamber walls;

a platen disposed within said plasma chamber for supporting a target substrate;

a gas source coupled to said plasma chamber for supplying an process gas to said chamber,

a power source connected to said chamber and configured to provide energy to ionize said process gas supplied to said chamber to form a plasma containing charged and non-charged species directed toward a surface of said target substrate; and

a plurality of magnetic elements disposed in spaced relation on the outside of the chamber walls, each of said plurality of magnets configured to supply a magnetic field directed at respective portions of said plasma within said chamber to control the uniformity of said plasma directed toward said target substrate.

2. The process uniformity control apparatus of claim 1 further comprising an anode spaced from said platen in said plasma chamber, said plasma being generated between said anode and said platen.

3. The process uniformity control apparatus of claim 2 further comprising a plurality of coils disposed around at least a portion of the chamber walls, said coils and said corresponding chamber walls defining said anode.

4. The process uniformity control apparatus of claim 3 wherein said plurality of coils receive RF energy to ionize said process gas.

5. The process uniformity control apparatus of claim 1 wherein said platen is biased with a negative voltage to attract said charged and non-charged species toward said target substrate.

6. The process uniformity control apparatus of claim 1 wherein said process gas contains desired dopant species for implantation into said target substrate.

7. The process uniformity control apparatus of claim 1 wherein said power source is a first power source, said process uniformity control apparatus further comprising a second power source connected to at least one of said plurality of magnets, said second power source configured to change a magnetic field associated with said at least one of said plurality of magnets.

8. The process uniformity control apparatus of claim 1 wherein a first and second of said purality of magnetic elements is separated by a first radial distance.

9. The process uniformity control apparatus of claim 8 wherein a third and a fourth of said purality of magnetic elements is separated by a second radial distance

10. The process uniformity control apparatus of claim 9 wherein said first and second radial distances are equal.

11. The process uniformity control apparatus of claim 9 wherein said first and second radial distances are unequal.

12. The process uniformity control apparatus of claim 1 wherein each of said magnets being connected to a power source to control respective magnetic fields applied to the plasma in the chamber, said magnetic fields configured to control the density distribution of the plasma in the plasma chamber based on a plurality of current signals representative of the measurement of the dose uniformity of the ions implanted into the workpiece.

13. A method of controlling plasma process uniformity comprising:

introducing an ionizable gas into a plasma chamber, said gas containing a desired dopant;

ionizing the gas using a source of power;

exposing a substrate to a plasma containing positive ions of said ionized gas;

accelerating said positive ions to an implant energy toward said substrate;

monitoring a uniformity of the ions during implantation into the substrate; and

applying a magnetic field from at least one magnetic element located outside the plasma chamber to the generated plasma inside the chamber.

14. The method of claim 13 wherein, after monitoring the uniformity of the ions during implantation into the substrate, the method further comprising determining if the uniformity matches desired characteristics for a particular implant process.

15. The method of claim 14 wherein the applied magnetic field is modified by changing a current applied to the at least one magnetic element.

16. The method of claim 13 wherein the positive ions are accelerated to an implant energy toward said substrate by biasing the workpiece.