Magnetic Memory Devices, Electronic Systems And Memory Cards Including The Same, Methods Of Manufacturing The Same, And Methods Of Controlling A Magnetization Direction Of A Magnetic Pattern

• US 20120023386A1
• Filed: 07/13/2011
• Published: 01/26/2012
• Est. Priority Date: 07/26/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Oh, Sechung, Lee, Jangeun, Kim, Woojin, Shin, Heeju
• Granted Patent: US 8,692,342 B2
• Time in Patent Office: Days
• US Class Current: 714/769
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.

Claims

1-26. -26. (canceled)

27. A magnetic memory device comprising:

a uniform free pattern on a substrate and comprising a first surface and a second surface opposite to each other;

a reference pattern on the substrate and having a fixed magnetization direction substantially perpendicular to the second surface of the uniform free pattern;

a tunnel barrier pattern between the first surface of the uniform free pattern and the reference pattern; and

a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern contacting the second surface of the uniform free pattern to generate atomic-magnetic moments perpendicular to the second surface of the uniform free pattern,

wherein a magnetization direction of the uniform free pattern is changeable to a direction-parallel or anti-parallel to the fixed magnetization direction of the reference pattern.

28. The magnetic memory device of claim 27, wherein the uniform free pattern comprises iron (Fe) and cobalt (Co);

and

a content ratio of iron (Fe) in the uniform free pattern is greater than a content ratio of cobalt (Co) in the uniform free pattern.

29. The magnetic memory device of claim 27, wherein the reference pattern comprises:

a reference perpendicular magnetic pattern having a first magnetization direction perpendicular to the second surface of the uniform free pattern; and

a spin polarization pattern between the reference perpendicular magnetic pattern and the tunnel barrier pattern and having a second magnetization direction perpendicular to the second surface of the uniform free pattern.

30. The magnetic memory device of claim 29, wherein the reference pattern further comprises an exchange coupling pattern between the reference perpendicular magnetic pattern and the tunnel barrier pattern;

and

the exchange coupling pattern combines the first and second magnetization directions to be parallel or anti-parallel to each other.

31. The magnetic memory device of claim 27, further comprising a fixed perpendicular magnetic pattern on one surface of the perpendicular anisotropy enhanced pattern,

wherein the uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern is between the uniform free pattern and the fixed perpendicular magnetic pattern;

and

the fixed perpendicular magnetic pattern has a fixed magnetization direction perpendicular to the second surface of the uniform free pattern.

32. The magnetic memory device of claim 27, further comprising a free perpendicular magnetic pattern on one surface of the perpendicular anisotropy enhanced pattern,

wherein the uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern is between the uniform free pattern and the free perpendicular magnetic pattern;

and

a magnetization direction of the free perpendicular magnetic pattern is changeable to be parallel or anti-parallel to the fixed magnetization direction of the reference pattern.

33. A magnetic memory device comprising:

a free pattern on a substrate, and having a first surface and a second surface opposite to each other;

a reference pattern on the substrate;

a tunnel barrier pattern between the first surface of the free pattern and the reference pattern; and

a non-magnetic non-parallel magnetism generator contacting the free pattern, the non-magnetic non-parallel magnetism generator increasing a magnetization of the free layer in a direction non-parallel to the second surface.

34. The magnetic memory device of claim 33, wherein the non-magnetic non-parallel magnetism generator increases a number of magnetic moments non-parallel to the second surface.

35. The magnetic memory device of claim 33, wherein the free pattern is made of an inplane magnetic material, whose magnetization, without an effect of the non-magnetic non-parallel magnetism generator is substantially in a direction parallel to the second surface.

36. The magnetic memory device of claim 35, wherein at least one of a thickness and a material of at least one of the free pattern and the non-magnetic non-parallel magnetism generator is selected to convert a portion of the magnetization of the free pattern from the direction parallel to the second surface, to the direction non-parallel to the second surface.

37. The magnetic memory device of claim 35, wherein the free pattern is a uniform material.

38. The magnetic memory device of claim 35, wherein the non-magnetic non-parallel magnetism generator includes a nonmagnetic metal-oxide pattern in contact with the second surface of the free pattern.

39. The magnetic memory device of claim 38, wherein a content ratio of a nonmagnetic metal in the nonmagnetic metal-oxide pattern is greater than a stoichiometric ratio, and a concentration of the nonmagnetic metal is substantially uniform over the entire nonmagnetic metal-oxide pattern.

40. The magnetic memory device of claim 38, wherein the nonmagnetic metal-oxide pattern generates atomic-magnetic moments, substantially perpendicular to the second surface of the free pattern, in a surface portion comprising the second surface of the free pattern.

41. The magnetic memory device of claim 38, wherein the reference pattern has a fixed magnetization direction parallel to the second surface of the free pattern;

a magnetization direction of the free pattern is changeable to a direction parallel or anti-parallel to the fixed magnetization direction of the reference pattern; and

an amount of atomic-magnetic moments non-parallel to the second surface is increased in the free pattern by the nonmagnetic metal-oxide pattern.

42. The magnetic memory device of claim 38, wherein the free pattern comprises iron (Fe) and cobalt (Co);

and

a content ratio of the iron (Fe) in the free pattern is greater than a content ratio of cobalt (Co) in the free pattern.

43. The magnetic memory device of claim 38, wherein the nonmagnetic metal-oxide pattern comprises a tantalum-rich tantalum oxide.

44. The magnetic memory device of claim 38, wherein the non-magnetic non-parallel magnetism generator further includes a surface local region partially on the second surface of the free pattern, wherein the surface local region comprises a material different from a magnetic material in the free pattern.

45. The magnetic memory device of claim 44, wherein the nonmagnetic metal-oxide pattern comprises a first portion of an amorphous state and a second portion of a crystalline state;

and

the surface local region contacts the second portion of the nonmagnetic metal-oxide pattern.

46. The magnetic memory device of claim 44, wherein the surface local region comprises an oxide formed by oxidizing a portion of the magnetic material of the free pattern.

47. The magnetic memory device of claim 38, wherein the non-magnetic non-parallel magnetism generator further includes particles within the free pattern, the particles comprising a material different from the free pattern.

48. The magnetic memory device of claim 38, wherein the reference pattern, the tunnel barrier pattern, and the free pattern correspond to a first reference pattern, a first tunnel barrier pattern, and a first free pattern, respectively, and

further comprising:

a second free pattern comprising a first surface and a second surface opposite to each other;

a second reference pattern on the first surface of the second free pattern; and

a second tunnel barrier pattern between the first surface of the second free pattern and the second reference pattern,

wherein the nonmagnetic metal-oxide pattern is between the second surface of the first free pattern and the second surface of the second free pattern.

49. The magnetic memory device of claim 38, wherein the nonmagnetic metal-oxide pattern has a substantially uniform thickness.

50. The magnetic memory device of claim 38, wherein the reference pattern comprises a first magnetic material;

the free pattern comprises a second magnetic material;

each of the first and second magnetic materials comprises iron (Fe); and

a content ratio of iron (Fe) in the second magnetic material is equal to or greater than that in the first magnetic material.

51. The magnetic memory device of claim 38, wherein the nonmagnetic metal-oxide pattern has a thickness of about 2 Å

to about 20 Å

.

52. The magnetic memory device of claim 35, wherein the non-magnetic non-parallel magnetism generator is a surface local region partially in one surface of the free pattern and comprising a material different from the free pattern.

53. The magnetic memory device of claim 52, wherein the surface local region comprises an oxide formed by oxidizing a portion of the one surface of the free pattern or a nitride formed by nitrifying a portion of the one side of the free pattern.

54. The magnetic memory device of claim 52, wherein the free pattern comprises a first surface adjacent to the tunnel barrier pattern and a second surface opposite to the first surface;

and

the surface local region is partially in the second surface of the free pattern.

55. The magnetic memory device of claim 54, wherein the non-magnetic non-parallel magnetism generator further includes a thin pattern on the second surface of the free pattern.

56. The magnetic memory device of claim 55, wherein the thin pattern comprises a first portion having a first thickness and a second portion having a thinner second thickness than the first thickness;

and

the surface local region is directly below the second portion.

57. The magnetic memory device of claim 55, wherein the thin pattern comprises a first portion of an amorphous state and a second portion of a crystalline state;

and

the surface local region is directly below the second portion of the thin pattern.

58. The magnetic memory device of claim 55, wherein the reference pattern, the tunnel barrier pattern, and the free pattern correspond to a first reference pattern, a fist tunnel barrier pattern, and a first free pattern, respectively, and

further comprising:

a second free pattern comprising a first surface and a second surface opposite to each other;

a second reference pattern on the first surface of the second free pattern; and

a second tunnel barrier pattern between the first surface of the second free pattern and the second reference pattern,

wherein the thin pattern is between the second surface of the first free pattern and the second surface of the second free pattern.

59. The magnetic memory device of claim 52, wherein the non-magnetic non-parallel magnetism generator further includes particles within the free pattern, wherein the particles comprise a material different from the free pattern.

60. The magnetic memory device of claim 52, wherein the reference pattern comprises a first magnetic material;

the free pattern comprises a second magnetic material;

each of the first and second magnetic materials comprises iron (Fe); and

a content ratio of iron (Fe) in the second magnetic material is equal to or greater than a content ratio of iron (Fe) in the first magnetic material.

61. The magnetic memory device of claim 35, wherein the non-magnetic non-parallel magnetism generator includes a surface local region partially on the second surface of the free pattern, wherein the surface local region comprises a material different from a magnetic material in the free pattern.

62. The magnetic memory device of claim 35, wherein the non-magnetic non-parallel magnetism generator includes particles within the free pattern and comprising a nonmagnetic conductive material.

63. The magnetic memory device of claim 62, wherein the free pattern comprises a first surface and a second surface opposite to each other;

the first surface of the free pattern is adjacent to the tunnel barrier pattern; and

the particles are spaced from the first and second surfaces.

64. The magnetic memory device of claim 62, wherein the free pattern comprises a first surface adjacent to the tunnel barrier pattern and a second surface opposite to the first surface;

and

the reference pattern and the tunnel barrier pattern correspond to a first reference pattern and a first tunnel barrier pattern, respectively, and

further comprising;

a second reference pattern on the second surface of the free pattern; and

a second tunnel barrier pattern between the second surface of the free pattern and the second reference pattern.

65. The magnetic memory device of claim 62, wherein the reference pattern comprises a first magnetic material;

the free pattern comprises a second magnetic material;

each of the first and second magnetic materials comprises iron (Fe); and

a content ratio of iron (Fe) in the second magnetic material is equal to or greater than a content ratio of iron (Fe) in the first magnetic material.

66. The magnetic memory device of claim 33, wherein the free pattern is made of a perpendicular magnetic material, whose magnetization, without an effect of the non-magnetic non-parallel magnetism generator is less substantially in a direction parallel to the second surface.

67. The magnetic memory device of claim 66, wherein the non-magnetic non-parallel magnetism generator is a perpendicular anisotropy enhanced pattern contacting the second surface of the free pattern to generate atomic-magnetic moments perpendicular to the second surface of the free pattern,

wherein a magnetization direction of the free pattern is changeable to a direction parallel or anti-parallel to the fixed magnetization direction of the reference pattern.

68. The magnetic memory device of claim 67, wherein the free pattern comprises iron (Fe) and cobalt (Co);

and

a content ratio of iron (Fe) in the free pattern is greater than a content ratio of cobalt (Co) in the free pattern.

69. The magnetic memory device of claim 67, wherein the reference pattern comprises:

a reference perpendicular magnetic pattern having a first magnetization direction perpendicular to the second surface of the free pattern; and

a spin polarization pattern between the reference perpendicular magnetic pattern and the tunnel barrier pattern and having a second magnetization direction perpendicular to the second surface of the free pattern.

70. The magnetic memory device of claim 69, wherein the reference pattern further comprises an exchange coupling pattern between the reference perpendicular magnetic pattern and the tunnel barrier pattern;

and

the exchange coupling pattern combines the first and second magnetization directions to be parallel or anti-parallel to each other.

71. The magnetic memory device of claim 67, further comprising a fixed perpendicular magnetic pattern on one surface of the perpendicular anisotropy enhanced pattern,

wherein the perpendicular anisotropy enhanced pattern is between the free pattern and the fixed perpendicular magnetic pattern;

and

the fixed perpendicular magnetic pattern has a fixed magnetization direction perpendicular to the second surface of the free pattern.

72. The magnetic memory device of claim 67, further comprising a free perpendicular magnetic pattern on one surface of the perpendicular anisotropy enhanced pattern,

wherein the perpendicular anisotropy enhanced pattern is between the free pattern and the free perpendicular magnetic pattern;

and

a magnetization direction of the free perpendicular magnetic pattern is changeable to be parallel or anti-parallel to the fixed magnetization direction of the reference pattern.

73. An electronic system, comprising:

an input/output device, connected to a bus, configured to receive and send data externally;

an interface, connected to the bus, configured to transmit data to and receive data from a communications network;

a controller, connected to the bus, configured to process commands; and

a magnetic memory device according to claim 33, connected to the bus, configured to store and retrieve data.

74. A memory card, comprising:

a magnetic memory device according to claim 33, connected to a bus, configured to store and retrieve data; and

a controller including

a processing unit connected to the bus, configured to control general operations of the memory card,

a RAM, connected to the bus, configured as an operating memory of the processing unit,

a host interface connected to the bus, configured to implement a data exchange protocol between the memory card and a host,

a memory interface connected to the bus, configured to connect the memory controller with the memory device, and

an error correction block connected to the bus, configured to detect and correct errors of data read from the magnetic memory device.

75. A method of manufacturing a magnetic memory device, comprising:

forming a magnetic tunneling junction including,

forming a free pattern on a substrate, and having a first surface and a second surface opposite to each other,

forming a reference pattern on the substrate, and

forming a tunnel barrier pattern between the first surface of the free pattern and the reference pattern, and

forming a non-magnetic non-parallel magnetism generator contacting the free pattern, the non-magnetic non-parallel magnetism generator increasing a magnetization of the free pattern in a direction non-parallel to the second surface.

76. The method of claim 75, wherein the free pattern is made of an inplane magnetic material, whose magnetization, without an effect of the non-magnetic non-parallel magnetism generator is substantially in a direction parallel to the second surface.

77. The method of claim 75, wherein the free pattern is made of a perpendicular magnetic material, whose magnetization, without an effect of the non-magnetic non-parallel magnetism generator is less substantially in a direction parallel to the second surface.

78. A method of controlling a magnetization direction of a free pattern of magnetic tunneling junction, comprising:

forming the magnetic tunneling junction including,

forming the free pattern having a thickness and a material on a substrate, and having a first surface and a second surface opposite to each other;

forming a reference pattern on the substrate;

forming a tunnel barrier pattern between the first surface of the free pattern and the reference pattern; and

forming a non-magnetic non-parallel magnetism generator contacting the free pattern, the non-magnetic non-parallel magnetism generator having a thickness;

forming a passivation pattern contacting the free pattern, the non-magnetic non-parallel magnetism generator having a thickness; and

controlling at least one of the thickness and the material of at least one of the free pattern, a non-magnetic non-parallel magnetism generator, and the passivation pattern to convert a portion of the magnetization of the free pattern from a direction parallel to the second surface, to the direction non-parallel to the second surface.