PHASE CHANGE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME
First Claim
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1. A method for fabricating a phase change random access memory (PCRAM), comprising:
- forming a switching element on a semiconductor substrate;
forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semiconductor substrate having the switching element formed thereon, and by patterning the plurality of material layers to have different lengths or different side shapes;
forming a heating electrode on sidewalls of the interlayer dielectric layer and an upper surface of the switching element; and
forming a phase change material layer to fill a space inside of the heating electrode.
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Abstract
A method for fabricating a PCRAM includes forming a switching element on a semiconductor substrate, forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semiconductor substrate having the switching element formed thereon, and by patterning the plurality of material layers to have different lengths or different side shapes, forming a heating electrode on sidewalls of the interlayer dielectric layer and an upper surface of the switching element, and forming a phase change material layer to fill a space inside of the heating electrode.
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Citations
16 Claims
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1. A method for fabricating a phase change random access memory (PCRAM), comprising:
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forming a switching element on a semiconductor substrate; forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semiconductor substrate having the switching element formed thereon, and by patterning the plurality of material layers to have different lengths or different side shapes; forming a heating electrode on sidewalls of the interlayer dielectric layer and an upper surface of the switching element; and forming a phase change material layer to fill a space inside of the heating electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A PCRAM comprising:
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a switching element formed on a semiconductor substrate; an interlayer dielectric layer of a multilayer-structure formed on the semiconductor substrate, exposing the switching element, and having a raised and grooved side surface; a heating electrode formed on sidewalls of the interlayer dielectric layer and an upper surface of the switching element; and a phase change material layer formed to fill a space inside of the heating electrode. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification