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PHASE CHANGE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME

  • US 20120025162A1
  • Filed: 12/22/2010
  • Published: 02/02/2012
  • Est. Priority Date: 07/30/2010
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a phase change random access memory (PCRAM), comprising:

  • forming a switching element on a semiconductor substrate;

    forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semiconductor substrate having the switching element formed thereon, and by patterning the plurality of material layers to have different lengths or different side shapes;

    forming a heating electrode on sidewalls of the interlayer dielectric layer and an upper surface of the switching element; and

    forming a phase change material layer to fill a space inside of the heating electrode.

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