NANOSTRUCTURE ARRAY TRANSISTOR
First Claim
1. A transistor comprising:
- an array of nanostructures, wherein nanostructures in the array of nanostructures include first segments, second segments, and third segments, the second segments are between the first and third segments;
a first electrode in electrical contact with the first segments of the nanostructures;
a second electrode surrounding ones of the second segments of the nanostructures; and
a third electrode in electrical contact with the third segments of the nanostructures.
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Abstract
Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that may be formed with different materials and/or doping to achieve desired effects. Collectively, the lower segments may form the source or drain, with the middle segments collectively forming the channel. Alternatively, the lower segments could collectively form the emitter or collector, with the middle segments collectively forming the base. Transistor electrodes may be planar metal structures that surround sidewalls of the nanostructures. The transistors may be Field Effect Transistors (FETs) or bipolar junction transistors (BJTs). Heterojunction bipolar junction transistors (HBTs) and high electron mobility transistors (HEMTs) are possible.
17 Citations
37 Claims
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1. A transistor comprising:
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an array of nanostructures, wherein nanostructures in the array of nanostructures include first segments, second segments, and third segments, the second segments are between the first and third segments; a first electrode in electrical contact with the first segments of the nanostructures; a second electrode surrounding ones of the second segments of the nanostructures; and a third electrode in electrical contact with the third segments of the nanostructures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a transistor comprising:
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forming an array of nanostructures, including forming first segments, second segments, and third segments in the nanostructures, the second segments are between the first and the third segments; forming a first electrode in electrical contact with the first segments of the nanostructures; forming a second electrode surrounding ones of the second segments of the nanostructures; and forming a third electrode in electrical contact with the third segments of the nanostructures. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A field effect transistor comprising:
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an array of nanostructures, the nanostructures having lower segments, middle segments, and upper segments, the upper segments and the lower segments are doped with a material having a first type of conductivity; a first source/drain electrode in electrical contact with the lower segments of the array of nano structures; a gate electrode surrounding ones of the middle segments of the plurality of nanostructures; and a second source/drain electrode in electrical contact with the upper segments. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A bipolar junction transistor comprising:
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an array of nanostructures, the nanostructures having lower segments, middle segments, and upper segments, the upper segments and the lower segments are doped with a material having a first type of conductivity, the middle segments are doped with a material having a second type of conductivity; a first emitter/collector electrode in electrical contact with the lower segments of the array of nanostructures; a base electrode in electrical contact with the middle segments of the plurality of nanostructures; and a second emitter/collector electrode in electrical contact with the upper segments. - View Dependent Claims (35, 36, 37)
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Specification