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Transistors, methods of manufacturing transistors, and electronic devices including transistors

  • US 20120025187A1
  • Filed: 03/24/2011
  • Published: 02/02/2012
  • Est. Priority Date: 07/30/2010
  • Status: Abandoned Application
First Claim
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1. A transistor comprising:

  • a channel layer including first and second layers, the first layer configured to switch between a normally conductive state and a depletion state according to a voltage bias, a conductivity of the second layer less than a conductivity of the first layer in the conductive state, the channel layer including an oxide;

    a source and a drain on the channel layer;

    a gate on the channel layer; and

    a gate insulation layer between the first layer and the gate, the first layer between the second layer and the gate insulation layer.

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