Semiconductor Device and Manufacturing Method Thereof
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor layer on an insulating surface;
forming a source electrode in contact with the oxide semiconductor layer;
forming a drain electrode in contact with the oxide semiconductor layer;
forming a first insulating layer over the source electrode;
forming a second insulating layer over the drain electrode;
forming a gate insulating layer over the oxide semiconductor layer, the source electrode, the drain electrode, the first insulating layer, and the second insulating layer;
forming a conductive layer over the gate insulating layer so that the conductive layer overlaps with at least a part of a region sandwiched between the source electrode and the drain electrode;
forming an insulating film so that the insulating film covers the conductive layer;
processing the insulating film so that at least parts of regions of the conductive layer, which overlap with the source electrode and the drain electrode, are exposed; and
etching the exposed regions of the conductive layer, thereby forming a gate electrode overlapping with at least the part of the region sandwiched between the source electrode and the drain electrode in a self-aligned manner.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for manufacturing a semiconductor device, which enables miniaturization and reduction of defect, is provided. It includes forming an oxide semiconductor layer, and source and drain electrodes in contact with the oxide semiconductor layer, over an insulating surface; forming insulating layers over the source electrode and the drain electrode; forming a gate insulating layer over the oxide semiconductor layer, the source and drain electrodes, and the insulating layer; forming a conductive layer over the gate insulating layer; forming an insulating film covering the conductive layer; processing the insulating film so that at least part of a region of the conductive layer, which overlaps with the source electrode or the drain electrode, is exposed; and etching the exposed region of the conductive layer to form a gate electrode overlapping with at least part of the region sandwiched between the source electrode and the drain electrode, in a self-aligned manner.
-
Citations
25 Claims
-
1. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming an oxide semiconductor layer on an insulating surface; forming a source electrode in contact with the oxide semiconductor layer; forming a drain electrode in contact with the oxide semiconductor layer; forming a first insulating layer over the source electrode; forming a second insulating layer over the drain electrode; forming a gate insulating layer over the oxide semiconductor layer, the source electrode, the drain electrode, the first insulating layer, and the second insulating layer; forming a conductive layer over the gate insulating layer so that the conductive layer overlaps with at least a part of a region sandwiched between the source electrode and the drain electrode; forming an insulating film so that the insulating film covers the conductive layer; processing the insulating film so that at least parts of regions of the conductive layer, which overlap with the source electrode and the drain electrode, are exposed; and etching the exposed regions of the conductive layer, thereby forming a gate electrode overlapping with at least the part of the region sandwiched between the source electrode and the drain electrode in a self-aligned manner. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming an oxide semiconductor layer on an insulating surface; forming a source electrode in contact with the oxide semiconductor layer; forming a drain electrode in contact with the oxide semiconductor layer; forming a first insulating layer over the source electrode; forming a second insulating layer over the drain electrode; forming a gate insulating layer over the oxide semiconductor layer, the source electrode, the drain electrode, the first insulating layer, and the second insulating layer; forming a conductive layer over the gate insulating layer so that the conductive layer overlaps with at least a part of a region sandwiched between the source electrode and the drain electrode; processing the conductive layer so that at least parts of regions of the gate insulating layer, which overlap with the source electrode and the drain electrode, are exposed, thereby forming a gate electrode overlapping with at least the part of the region sandwiched between the source electrode and the drain electrode in a self-aligned manner. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A semiconductor device comprising:
-
an oxide semiconductor layer on an insulating surface; a source electrode in contact with the oxide semiconductor layer; a drain electrode in contact with the oxide semiconductor layer; a first insulating layer over the source electrode; a second insulating layer over the drain electrode; a gate insulating layer over the oxide semiconductor layer, the source electrode, the drain electrode, the first insulating layer, and the second insulating layer; and a gate electrode that is formed in a self-aligned manner to overlap with at least a part of a region sandwiched between the source electrode and the drain electrode. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
-
Specification