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Semiconductor Device and Manufacturing Method Thereof

  • US 20120025191A1
  • Filed: 07/27/2011
  • Published: 02/02/2012
  • Est. Priority Date: 07/30/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer on an insulating surface;

    forming a source electrode in contact with the oxide semiconductor layer;

    forming a drain electrode in contact with the oxide semiconductor layer;

    forming a first insulating layer over the source electrode;

    forming a second insulating layer over the drain electrode;

    forming a gate insulating layer over the oxide semiconductor layer, the source electrode, the drain electrode, the first insulating layer, and the second insulating layer;

    forming a conductive layer over the gate insulating layer so that the conductive layer overlaps with at least a part of a region sandwiched between the source electrode and the drain electrode;

    forming an insulating film so that the insulating film covers the conductive layer;

    processing the insulating film so that at least parts of regions of the conductive layer, which overlap with the source electrode and the drain electrode, are exposed; and

    etching the exposed regions of the conductive layer, thereby forming a gate electrode overlapping with at least the part of the region sandwiched between the source electrode and the drain electrode in a self-aligned manner.

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