SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD

• US 20120025218A1
• Filed: 08/02/2011
• Published: 02/02/2012
• Est. Priority Date: 08/02/2010
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Ueno, Kazuhiko, Suzuki, Naoto, Ito, Kosaburo, Seko, Toshihiro
• Granted Patent: US 8,921,877 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located on at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, the chip mounted on the base board and a transparent plate disposed on the wavelength converting layer including a spacer and a phosphor having a high density. The wavelength converting layer can be formed in a thin uniform thickness between the transparent plate and a top surface of the chip using the spacer so as to extend toward the transparent plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the thin wavelength converting layer including the phosphor having a high density, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

Claims

1. A semiconductor light-emitting device comprising:

a base board having a mounting surface and a conductor pattern formed on the mounting surface;

a semiconductor light-emitting chip having a bottom surface, a top surface and a side surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps;

a transparent plate having a side surface and a bottom surface formed in a substantially planar shape, and located over the top surface of the semiconductor light-emitting chip so that the bottom surface of the transparent plate covers the top surface of the semiconductor light-emitting chip; and

a wavelength converting layer having a thickness and a side surface disposed between the bottom surface of the transparent plate and at least the side surface of the semiconductor light-emitting chip so that the side surface of the wavelength converting layer extends from the side surface of the semiconductor light-emitting chip toward the bottom surface of the transparent plate, the wavelength converting layer including at least one phosphor having a particle size and a particulate spacer having a particle size that is larger than the particle size of the at least one phosphor, wherein the thickness of the wavelength converting layer is defined between the top surface of the semiconductor light-emitting chip and the bottom surface of the transparent plate and is maintained by supporting the bottom surface of the transparent plate using the particulate spacer located on the top surface of the semiconductor light-emitting chip.

2. The semiconductor light-emitting device according to claim 1, further comprising:

a frame located adjacent the mounting surface of the base board so as to surround the semiconductor light-emitting chip and the wavelength converting layer; and

a reflective material layer having a side slant surface disposed at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, wherein the side slant surface contacts with the side surface of the wavelength converting layer and extends from the side surface of the semiconductor light-emitting chip toward the bottom surface of the transparent plate.

3. The semiconductor light-emitting device according to claim 1, wherein the particulate spacer includes at least one of an oxide silicon particle and a glass bead, and the particle size of the particulate spacer is 10 to 100 micro meters.

4. The semiconductor light-emitting device according to claim 1, wherein the wavelength converting layer contains the at least one phosphor of at least 50 weight percent.

5. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting chip is a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor and a green phosphor.

6. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting chip is an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.

7. The semiconductor light-emitting device according to claim 1, wherein the wavelength converting layer is disposed between the bottom surface of the transparent plate and the mounting surface of the base board so as to fill a space between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board.

8. The semiconductor light-emitting device according to claim 1, further comprising a plurality of semiconductor light-emitting chips.

17. A method for manufacturing the semiconductor light-emitting device according to claim 1, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured paste between the bottom surface of the transparent plate and the side surface of the semiconductor light-emitting chip so as to extend from the side surface of the semiconductor light-emitting chip toward the bottom surface of the transparent plate; and

forming the wavelength converting layer having a thickness between the bottom surface of the transparent plate and the top surface of the semiconductor light-emitting chip by solidifying the uncured paste.

18. A method for manufacturing the semiconductor light-emitting device according to claim 2, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chip to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured paste between the bottom surface of the transparent plate and the outer side surface of the semiconductor light-emitting chip so as to extend from the side surface of the semiconductor light-emitting chips toward the bottom surface of the transparent plate; and

disposing an uncured reflective material at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the semiconductor light-emitting chip and the mounting surface of the base board.

9. A semiconductor light-emitting device comprising:

a base board having a mounting surface and a conductor pattern formed on the mounting surface;

a plurality of semiconductor light-emitting chips each having a bottom surface, a top surface and an outer side surface located in an outward direction of each of the semiconductor light-emitting chips, and each of the semiconductor light-emitting chips including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps so that the plurality of semiconductor light-emitting chips are located adjacent each other;

a transparent plate having a side surface and a bottom surface formed in a substantially planar shape, and located over the top surface of each of the semiconductor light-emitting chips so that the bottom surface of the transparent plate covers the top surface of each of the semiconductor light-emitting chips; and

a wavelength converting layer having a thickness, a side surface and a bottom surface facing the mounting surface of the base board, and disposed between the bottom surface of the transparent plate and at least the outer side surface of at least one of the semiconductor light-emitting chips so that the side surface of the wavelength converting layer extends from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the transparent plate, the wavelength converting layer including at least one phosphor having a particle size and a particulate spacer having a particle size that is larger than the particle size of the at least one phosphor, wherein the thickness of the wavelength converting layer is defined between the top surface of each of the semiconductor light-emitting chips and the bottom surface of the transparent plate and is maintained by supporting the bottom surface of the transparent plate using the particulate spacer located on the top surface of each of the semiconductor light-emitting chips.

10. The semiconductor light-emitting device according to claim 9, further comprising:

a frame located adjacent the mounting surface of the base board so as to surround the semiconductor light-emitting chips and the wavelength converting layer while facing the outer side surface of the at least one of the semiconductor light-emitting chips; and

a reflective material layer having a side slant surface disposed at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of at least one of the semiconductor light-emitting chips and the mounting surface of the base board while surrounding the solder bumps, wherein the side slant surface contacts with the side surface of the wavelength converting layer and extends from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the transparent plate.

11. The semiconductor light-emitting device according to claim 9, wherein the particulate spacer includes at least one of an oxide silicon particle and a glass bead, and the particle size of the particulate spacer is 10 to 100 micro meters.

12. The semiconductor light-emitting device according to claim 9, wherein the wavelength converting layer contains the at least one phosphor of at least 50 weight percent.

13. The semiconductor light-emitting device according to claim 9, wherein the plurality of semiconductor light-emitting chips includes a blue light-emitting chip and the at least one phosphor of the wavelength converting layer is selected from the group consisting of a yellow phosphor, and two phosphors including a red phosphor and a green phosphor.

14. The semiconductor light-emitting device according to claim 9, wherein the plurality of semiconductor light-emitting chips includes an ultraviolet light-emitting chip and the at least one phosphor of the wavelength converting layer includes at least one of a red phosphor, a green phosphor, and a blue phosphor.

15. The semiconductor light-emitting device according to claim 9, wherein the bottom surface of the wavelength converting layer is formed in a convex shape extending in a direction toward the transparent plate in at least one space between adjacent semiconductor light-emitting chips.

16. The semiconductor light-emitting device according to claim 9, wherein the bottom surface of the wavelength converting layer is located at a substantially same level as a level of the bottom surface of at least one of the semiconductor light-emitting chips in at least one space between adjacent semiconductor light-emitting chips.

19. A method for manufacturing the semiconductor light-emitting device according to claim 9, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chips to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured paste between the bottom surface of the transparent plate and the outer side surface of the at least one of the semiconductor light-emitting chips so as to extend from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the transparent plate; and

forming the wavelength converting layer having a thickness between the bottom surface of the transparent plate and the top surface of the at least one of the semiconductor light-emitting chips by solidifying the uncured paste.

20. A method for manufacturing the semiconductor light-emitting device according to claim 10, comprising:

providing the base board;

connecting each of the chip electrodes of the semiconductor light-emitting chips to a respective portion of the conductor pattern of the base board via the solder bumps;

disposing an uncured paste between the bottom surface of the transparent plate and the outer side surface of the at least one of the semiconductor light-emitting chips so as to extend from the outer side surface of the at least one of the semiconductor light-emitting chips toward the bottom surface of the transparent plate; and

disposing an uncured reflective material at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate and between the bottom surface of the at least one of the semiconductor light-emitting chips and the mounting surface of the base board.