SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS

• US 20120031330A1
• Filed: 07/21/2011
• Published: 02/09/2012
• Est. Priority Date: 08/04/2010
• Status: Active Grant

• Current Assignee: DENSO Corporation, NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: DENSO Corporation, NuFlare Technology, Inc. (Toshiba Corporation)
• Inventors: TSUMORI, Toshiro, Mitani, Shinichi, Suzuki, Kunihiko
• Granted Patent: US 9,139,933 B2
• Time in Patent Office: Days
• US Class Current: 118/708
• CPC Class Codes: C23C 14/021 Cleaning or etching treatments
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C23C 16/32 Carbides
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C30B 25/12 Substrate holders or susceptors
• CPC Class Codes: C30B 29/36 Carbides
• CPC Class Codes: C30B 33/12 in gas atmosphere or plasma

Abstract

According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.

Claims

1. A semiconductor substrate manufacturing apparatus comprising:

a film-forming chamber in which a SiC epitaxial film is formed on a wafer placed on a susceptor;

a cleaning chamber in which a SiC film deposited on the susceptor is removed; and

a regeneration chamber in which a SiC film is formed on the susceptor.

2. The semiconductor substrate manufacturing apparatus according to claim 1, wherein the cleaning chamber can also be used as the regeneration chamber.

3. The semiconductor substrate manufacturing apparatus according to claim 2, wherein the cleaning chamber is connected to the film-forming chamber through a transport chamber containing a transport robot for transporting the susceptor.

4. The semiconductor substrate manufacturing apparatus according to claim 1, wherein the cleaning chamber includes a heater for heating the susceptor at a temperature of 400°

C. or higher, and an etching gas supply system for supplying an etching gas from above the susceptor to remove the SiC film.

5. The semiconductor substrate manufacturing apparatus according to claim 2, wherein the cleaning chamber includes a heater for heating the susceptor at a temperature of 400°

C. or higher, and an etching gas supply system for supplying an etching gas from above the susceptor to remove the SiC film.

6. The semiconductor substrate manufacturing apparatus according to claim 3, wherein the cleaning chamber includes a heater for heating the susceptor at a temperature of 400°

C. or higher, and an etching gas supply system for supplying an etching gas from above the susceptor to remove the SiC film.

7. The semiconductor substrate manufacturing apparatus according to claim 4, wherein the cleaning chamber includes a detection unit that detects a gas produced by a reaction between the SiC film and the etching gas.

8. The semiconductor substrate manufacturing apparatus according to claim 7, wherein the detection unit is provided near an outlet port through which gas is discharged from the cleaning chamber.

9. The semiconductor substrate manufacturing apparatus according to claim 7, further comprising a control unit that receives a detection result from the detection unit, and when determining that a reaction between the SiC film and the etching gas has been completed, sends a signal to the etching gas supply system to stop supply of the etching gas into the cleaning chamber.

10. The semiconductor substrate manufacturing apparatus according to claim 8, further comprising a control unit that receives a detection result from the detection unit, after determining that a reaction between the SiC film and the etching gas has been completed, sends a signal to the etching gas supply system to stop supply of the etching gas into the cleaning chamber.

11. The semiconductor substrate manufacturing apparatus according to claim 9, wherein the control unit is configured to generate an alarm, after determining that a reaction between the SiC film and the etching gas has been completed.

12. The semiconductor substrate manufacturing apparatus according to claim 10, wherein the control unit is configured to generate an alarm, after determining that a reaction between the SiC film and the etching gas has been completed.

13. The semiconductor substrate manufacturing apparatus according to claim 9, wherein the control unit determines completion of a reaction between the SiC film and the etching gas, after a predetermined length of time has passed since the concentration of the etching gas is at a predetermined level or less.

14. The semiconductor substrate manufacturing apparatus according to claim 9, wherein the control unit is configured to determine that a reaction between the SiC film and the etching gas has been completed when a predetermined length of time has passed after the concentration of the etching gas is at a predetermined level or less.

15. The semiconductor substrate manufacturing apparatus according to claim 10, wherein the control unit is configured to determine that a reaction between the SiC film and the etching gas has been completed when a predetermined length of time has passed after the concentration of the etching gas is at a predetermined level or less.

16. The semiconductor substrate manufacturing apparatus according to claim 7, wherein the etching gas contains ClF₃ gas and the detection unit detects Cl₂ gas produced by a reaction between the SiC film and the ClF₃ gas.

17. The semiconductor substrate manufacturing apparatus according to claim 9 wherein the etching gas contains ClF₃ gas and the detection unit detects Cl₂ gas produced by a reaction between the SiC film and the ClF₃ gas.

18. The semiconductor substrate manufacturing apparatus according to claim 10 wherein the etching gas contains ClF₃ gas and the detection unit detects Cl₂ gas produced by a reaction between the SiC film and the ClF₃ gas.