Backside Stimulated Sensor with Background Current Manipulation

• US 20120032235A1
• Filed: 08/09/2010
• Published: 02/09/2012
• Est. Priority Date: 08/09/2010
• Status: Active Grant

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Inventors: Bikumandla, Manoj
• Granted Patent: US 8,519,490 B2
• Time in Patent Office: Days
• US Class Current: 257/253
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82
• CPC Class Codes: H01L 27/00 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate details thereof H01L23/00, H01L29/00 - H10K10/00; assemblies consisting of a plurality of individual solid state devices H01L25/00

Abstract

A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Claims

1. A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus, comprising:

a substrate including a backside;

a source coupled with the substrate to generate a background current; and

a detection element electrically coupled to measure the background current;

wherein the stimulus which is to be provided to the backside affects a measurable change in the background current.

2. The CMOS pixel of claim 1, wherein at least one layer of bio-probe or bio-probes are substantially coupled with the backside.

3. The CMOS pixel of claim 2, wherein the bio-probe or bio-probes have a capacity of affinity based binding with an analyte;

and

wherein the affinity based binding affects the background current.

4. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one positively charged entity.

5. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one negatively charged entity.

6. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one probe DNA that affinitively binds to a target DNA.

7. The CMOS pixel of claim 6, wherein the target DNA is attached to a label.

8. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes comprises at least one of heparin and protamine.

9. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes comprises at least one of an antibody and an antigen.

10. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one enzyme.

11. The CMOS pixel of claim 2, wherein the bio-probe or bio-probes include at least one selected from a cell and a tissue.

12. The CMOS pixel of claim 1, wherein the source to generate the background current includes a diode that is substantially disposed within the substrate.

13. The CMOS pixel of claim 12, wherein the diode includes one of more angles than a cuboid and fewer angles than a cuboid.

14. The CMOS pixel of claim 1, wherein the source to generate the background current includes a shallow trench isolation structure that is substantially disposed within the substrate, and wherein at least one of:

(1) the shallow trench isolation structure includes at least one rough surface; and

(2) the substrate includes a portion adjacent to the shallow trench isolation structure that includes embedded dopant atoms.

15. The CMOS pixel of claim 14, wherein the embedded dopant atoms include boron ions.

16. The CMOS pixel of claim 1, further including at least one cantilever;

wherein the at least one cantilever substantially interacts with the backside, and

wherein the at least one cantilever includes a layer of bio-probe or bio-probes coupled with a surface of the at least one cantilever.

17. The CMOS pixel of claim 16, wherein the at least one cantilever is coupled with the backside through an intermediary member.

18. A biosensor system comprising

a backside of a substrate;

and

an array of CMOS (Complementary Metal Oxide Semiconductor) pixels underneath the backside of the substrate; and

a multitude of bump structures coupled with the backside of the substrate.

19. The biosensor system of claim 18, wherein the multitude of bump structures are substantially separated by voids.

20. A biosensor system comprising

a CMOS (Complementary Metal Oxide Semiconductor) pixel;

and

an inductive member in vicinity of the CMOS pixel;

wherein the inductive member is thermally coupled with the CMOS pixel.

21. The biosensor system of claim 20, further comprising

a reference pixel;

and

a temperature sensor;

wherein the inductive member, the temperature sensor and the reference pixel form a feedback mechanism to control a temperature of the CMOS pixel.