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SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME

  • US 20120032263A1
  • Filed: 11/25/2009
  • Published: 02/09/2012
  • Est. Priority Date: 04/03/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a conductive film formed on an insulating substrate;

    a first wiring layer formed on the insulating substrate, having a greater thickness than the conductive film;

    a planarizing layer disposed over the insulating substrate so as to cover the first wiring layer and the conductive film; and

    an interlayer insulating film disposed on the planarizing layer,wherein the planarizing layer is made of an inorganic film, and has a recessed portion formed in a region in which the conductive film is disposed,wherein a first contact hole penetrating through at least the interlayer insulating film and reaching said first wiring layer is formed on the first wiring layer.wherein a second contact hole penetrating through at least the interlayer insulating film and reaching said conductive film is formed on the conductive film so as to run through an inside of the recessed portion, andwherein on the interlayer insulating film, a second wiring layer electrically connected to the conductive film through the second contact hole and a third wiring layer electrically connected to the first wiring layer through the first contact hole are formed.

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