SOFT ERROR RATE (SER) REDUCTION IN ADVANCED SILICON PROCESSES
First Claim
1. A method, comprising:
- providing a substrate;
forming a contact hole over the substrate; and
forming a conductive contact in the contact hole using a 11B-enriched Boron material.
1 Assignment
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Accused Products
Abstract
Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron.
16 Citations
20 Claims
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1. A method, comprising:
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providing a substrate; forming a contact hole over the substrate; and forming a conductive contact in the contact hole using a 11B-enriched Boron material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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providing a substrate; forming a portion of an interconnect structure over the substrate, the portion of the interconnect structure having an opening; obtaining a Boron-containing gas that is substantially free of a 10B isotope; and filling the opening with a conductive material to form a contact, the filling being carried out using the Boron-containing gas. - View Dependent Claims (11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a substrate; an interconnect structure formed over the substrate; and a conductive contact formed in the interconnect structure, the conductive contact having a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification