×

SOFT ERROR RATE (SER) REDUCTION IN ADVANCED SILICON PROCESSES

  • US 20120032334A1
  • Filed: 02/22/2011
  • Published: 02/09/2012
  • Est. Priority Date: 08/04/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method, comprising:

  • providing a substrate;

    forming a contact hole over the substrate; and

    forming a conductive contact in the contact hole using a 11B-enriched Boron material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×