NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME
First Claim
1. A nitride semiconductor laser element comprising:
- a nitride semiconductor layer having cavity planes at the ends of a waveguide region,an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, anda first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface,the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from AlxGa1-xN (0<
x≦
1) and a different material from that of the insulating film.
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Accused Products
Abstract
A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from AlxGa1-xN (0<x≦1) and a different material from that of the insulating film.
19 Citations
16 Claims
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1. A nitride semiconductor laser element comprising:
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a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from AlxGa1-xN (0<
x≦
1) and a different material from that of the insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a nitride semiconductor laser element comprising:
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forming an insulating film on an upper face of a nitride semiconductor layer; forming cavity planes substantially perpendicular to the upper face of the nitride semiconductor layer such that the cavity planes are apart from the end portions of the insulating film, and forming a first film from AlxGa1-xN (0<
x≦
1) and a different material from that of the insulating film to have a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film.
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Specification