SUBSTRATE FOR FLEXIBLE DISPLAY AND METHOD OF MANUFACTURING THE SUBSTRATE

• US 20120034451A1
• Filed: 04/14/2011
• Published: 02/09/2012
• Est. Priority Date: 08/03/2010
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: SEO, SANG-JOON, MIN, HOON-KEE, JIN, DONG-UN, AN, SUNG-GUK
• Application Number:
  US13/087,300
• Publication Number:
  US 20120034451A1
• Time in Patent Office: Days
• US Class Current: 428/332
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 2201/501 Blocking layers, e.g. against migration of ions
• CPC Class Codes: H01L 29/6675 Amorphous silicon or polysilicon transistors
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension

Abstract

A substrate for a flexible display is disclosed. The substrate has a film stress range that does not affect an electronic device such as a thin film transistor, and includes a barrier layer having excellent oxygen and moisture blocking characteristics, and a method of manufacturing the substrate. The substrate includes: a plastic substrate having a glass transition temperature from about 350° C. to about 500° C.; and a barrier layer disposed on the plastic substrate, having a multi-layer structure, wherein at least one silicon oxide layer and at least one silicon nitride layer are alternately stacked on each other, and having a film stress from about −200 MPa to about 200 MPa due to the at least one silicon oxide layer and the at least one silicon nitride layer.

Claims

1. A flexible substrate, comprising:

a plastic substrate having a glass transition temperature from about 350°

C. to about 500°

C.; and

a barrier layer disposed on the plastic substrate, having a multi-layer structure, which comprises at least one silicon oxide layer and at least one silicon nitride layer that are alternately stacked on each other, the barrier layer having a film stress from about −

200 MPa to about 200 MPa.

2. The substrate of claim 1, wherein the barrier layer comprises:

a first silicon oxide layer;

a silicon nitride layer stacked on the first silicon oxide layer; and

a second silicon oxide layer stacked on the silicon nitride layer.

3. The substrate of claim 1, wherein the barrier layer comprises:

a first silicon oxide layer;

a first silicon nitride layer stacked on the first silicon oxide layer;

a second silicon oxide layer stacked on the first silicon nitride layer;

a second silicon nitride layer stacked on the second silicon oxide layer; and

a third silicon oxide layer stacked on the second silicon nitride layer.

4. The substrate of claim 1, wherein the barrier layer comprises:

a first silicon oxide layer;

a first silicon nitride layer stacked on the first silicon oxide layer;

a second silicon oxide layer stacked on the first silicon nitride layer;

a second silicon nitride layer stacked on the second silicon oxide layer;

a third silicon oxide layer stacked on the second silicon nitride layer;

a third silicon nitride layer stacked on the third silicon oxide layer; and

a fourth silicon oxide layer stacked on the third silicon nitride layer.

5. The substrate of claim 1, wherein the at least one silicon oxide layer has compressive film stress, and wherein the at least one silicon nitride layer has tensile film stress.

6. The substrate of claim 1, wherein a film density of the at least one silicon nitride layer is from about 2.5 g/cm³ to about 2.7 g/cm³.

7. The substrate of claim 1, wherein a hydrogen atom content in the at least one silicon nitride layer is from about 13% to about 17%.

8. The substrate of claim 1, wherein a thickness of each of the at least one silicon nitride layer is from about 200 Å

to about 1000 Å

.

9. The substrate of claim 1, wherein a thickness of each of the at least one silicon oxide layer is from about 1000 Å

to about 3000 Å

.

10. The substrate of claim 1, wherein the plastic substrate comprises polyimide.

11. A method of manufacturing a flexible substrate, the method comprising:

providing a plastic substrate having a glass transition temperature from about 350°

C. to about 500°

C.; and

forming a barrier layer having a film stress from about −

200 MPa to about 200 MPa by alternately stacking at least one silicon oxide layer and at least one silicon nitride layer on the plastic substrate.

12. The method of claim 11, wherein the forming of the barrier layer comprises forming the barrier layer using a high temperature deposition technique at a temperature from about 350°

C. to about 400°

C.

13. The method of claim 11, wherein the barrier layer comprises:

a first silicon oxide layer;

a silicon nitride layer stacked on the first silicon oxide layer; and

a second silicon oxide layer stacked on the silicon nitride layer.

14. The method of claim 11, wherein the barrier layer comprises:

a first silicon oxide layer;

a first silicon nitride layer stacked on the first silicon oxide layer;

a second silicon oxide layer stacked on the first silicon nitride layer;

a second silicon nitride layer stacked on the second silicon oxide layer; and

a third silicon oxide layer stacked on the second silicon nitride layer.

15. The method of claim 11, wherein the barrier layer comprises:

a first silicon oxide layer;

a first silicon nitride layer stacked on the first silicon oxide layer;

a second silicon oxide layer stacked on the first silicon nitride layer;

a second silicon nitride layer stacked on the second silicon oxide layer;

a third silicon oxide layer stacked on the second silicon nitride layer;

a third silicon nitride layer stacked on the third silicon oxide layer; and

a fourth silicon oxide layer stacked on the third silicon nitride layer.

16. The method of claim 11, wherein the at least one silicon oxide layer has compressive film stress, and wherein the at least one silicon nitride layer has tensile film stress.

17. The method of claim 11, wherein a film density of the at least one silicon nitride layer is from about 2.5 g/cm³ to about 2.7 g/cm³.

18. The method of claim 11, wherein a hydrogen atom content in the at least one silicon nitride layer is from about 13% to about 17%.