GAS SUPPLY MEMBER, PLASMA TREATMENT METHOD, AND METHOD OF FORMING YTTRIA-CONTAINING FILM

• US 20120037596A1
• Filed: 07/29/2011
• Published: 02/16/2012
• Est. Priority Date: 08/12/2010
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: ETO, Hideo, Saito, Makoto, Ito, Sachiyo, Ikariyama, Rikyu
• Granted Patent: US 9,236,229 B2
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32495 Means for protecting the vessel against plasma
• CPC Class Codes: Y10T 137/87169 Supply and exhaust

Abstract

According to one embodiment, a gas supply member is provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member. An yttria-containing film is formed on a surface constituting the exhaust port and the surface of the downstream side of the gas supply member. At least a part of the surface constituting the exhaust port is formed with a curved surface.

Claims

1. A gas supply member provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member, the gas supply member comprising:

an yttria-containing film provided on a surface constituting the exhaust port and the surface of the downstream side of the gas supply member,

wherein at least a part of the surface constituting the exhaust port is formed with a curved surface.

2. The gas supply member according to claim 1,

wherein the curved surface is formed near a connection part between the surface constituting the exhaust port and the surface of the downstream side of the gas supply member.

3. The gas supply member according to claim 1,

wherein a thickness of the yttria-containing film is approximately constant on the surface constituting the exhaust port.

4. The gas supply member according to claim 1,

wherein the yttria-containing film is also formed on a surface constituting the gas flow channel near the exhaust port.

5. The gas supply member according to claim 1,

wherein a thickness of the yttria-containing film decreases toward a boundary between the gas flow channel and the exhaust port.

6. The gas supply member according to claim 5,

wherein the yttria-containing film is not formed on the gas flow channel.

7. The gas supply member according to claim 1,

wherein a curved surface of the exhaust port is formed such that an opening diameter of the exhaust port increases as it goes far from one end portion of the gas flow channel, and an opening diameter at the surface of the downstream side of the gas supply member is a second diameter which is larger than the first diameter.

8. The gas supply member according to claim 1,

wherein, when a gas exhausted from the exhaust port and changed in the plasma state, the surface of the downstream side of the gas supply member faces the gas in the plasma state.

9. The gas supply member according to claim 1,

wherein an alumina film is formed on the gas supply member, and the yttria-containing film is formed on the alumina film.

10. The gas supply member according to claim 1,

wherein the yttria-containing film has a melt-solidified part obtained by melting and solidifying the yttria-containing film from the surface in a range of a thickness of the yttria-containing film.

11. A plasma treatment method using a plasma treatment apparatus including a substrate holding unit which holds a substrate to be treated in a chamber, the gas supply member according to claim 1 formed with an exhaust port facing against the substrate holding unit, and a plasma generation unit which generates a gas in a plasma state in the chamber, the plasma treatment method comprising:

causing an inside of the chamber to be in a predetermined vacuum level;

supplying treatment gas to a space between the substrate holding unit and the gas supply member in the chamber, through the gas supply passage of the gas supply member;

applying a radio frequency voltage between the substrate holding unit and the gas supply member from the plasma generation unit, thereby generating a plasma phase from the treatment gas; and

performing plasma treatment to the substrate held by the substrate holding unit.

12. A method of forming an yttria-containing film on a gas supply member provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member, the exhaust port having an opening diameter increasing from the end portion so as to be a second diameter which is larger than the first diameter, and at least a part of surfaces constituting the exhaust port being formed with a curved surface, the method comprising:

forming the yttria-containing film on the surface of the downstream side of the gas supply member, the surfaces constituting the exhaust port, and an inner surface of the gas flow channel being adjacent to the exhaust port.

13. The method according to claim 12,

wherein the yttria-containing film is formed using a spraying method, a chemical vapor deposition method, an aerosol deposition method, a cold spraying method, a gas deposition method, an electrostatic powder impact deposition method, or an impact sintering method.

14. The method according to claim 12, further comprising:

before forming the yttria-containing film, forming an alumina film on the surface of the downstream side of the gas supply member, the surfaces constituting the exhaust port, and the inner surface of the gas flow channel being adjacent to the exhaust port; and

forming the yttria-containing film on the alumina film.

15. A method of forming an yttria-containing film on a gas supply member provided with a gas supply passage including a gas flow channel with a first diameter, and an exhaust port connected to one end portion of the gas flow channel and provided to a surface of a downstream side of the gas supply member, the exhaust port having an opening diameter increasing from the end portion so as to be a second diameter which is larger than the first diameter, and at least a part of surfaces constituting the exhaust port being formed with a curved surface, the method comprising:

closing the gas flow channel of the gas supply member using a plug member;

forming the yttria-containing film on the surface of the downstream side of the gas supply member, the surfaces constituting the exhaust port, and the plug member; and

removing the plug member of the gas flow channel.

16. The method according to claim 15,

wherein the yttria-containing film is formed using a spraying method, a chemical vapor deposition method, an aerosol deposition method, a cold spraying method, a gas deposition method, an electrostatic powder impact deposition method, or an impact sintering method.

17. The method according to claim 15, further comprising:

before forming the yttria-containing film, forming an alumina film on the surface of the downstream side of the gas supply member, the surfaces constituting the exhaust port, and the inner surface of the gas flow channel being adjacent to the exhaust port; and

forming the yttria-containing film on the alumina film.