METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, OPTOELECTRONIC COMPONENT, AND COMPONENT ARRANGEMENT HAVING A PLURALITY OF OPTOELECTRONIC COMPONENTS

• US 20120037930A1
• Filed: 04/03/2009
• Published: 02/16/2012
• Est. Priority Date: 04/03/2009
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Höppel, Lutz
• Granted Patent: US 9,240,523 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A method for producing optoelectronic components including A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation, B) applying separating structures on the semiconductor layer, C) applying a multiplicity of copper layers on the semiconductor layer in regions delimited by the separating structures, D) removing the separating structures, E) applying, a protective layer at least on lateral areas of copper layers, F) applying an auxiliary substrate on the copper layers, G) removing the growth substrate, H) singulating a composite assembly comprising the semiconductor layer, the copper layers and the auxiliary substrate to form components which are separated from one another.

Claims

1-15. -15. (canceled)

16. A method for producing optoelectronic components comprising:

A) providing a growth substrate with a semiconductor layer arranged thereon that produces a zone which is active during operation,

B) applying separating structures on the semiconductor layer,

C) applying a multiplicity of copper layers on the semiconductor layer in regions delimited by the separating structures,

D) removing the separating structures,

E) applying a protective layer at least on lateral areas of the copper layers,

F) applying an auxiliary substrate on the copper layers,

G) removing the growth substrate,

H) singulating a composite assembly comprising the semiconductor layer, the copper layers and the auxiliary substrate to form components which are separated from one another.

17. The method according to claim 16, further comprising:

between steps A) and C);

I) applying a contact layer on the semiconductor layer.

18. The method according to claim 17, further comprising:

after step E);

J) heat treatment of the component to improve adhesion of the contact layer on the copper layer.

19. The method according to claim 16, wherein step E) comprises the following substeps:

E1) applying a metal layer at least on the lateral areas of the copper layer,

E2) oxidation of at least the metal layer applied on the lateral areas of the copper layer to form a metal oxide layer.

20. The method according to claim 16, further comprising:

after step G);

K1) applying an electrical contact on a partial region of a surface which was uncovered by step G).

21. The method according to claim 16, further comprising:

after step G);

K2) structuring the semiconductor layer on the surface which was uncovered by step G).

22. The method according claim 21, wherein trenches which subdivide the semiconductor layer are produced by structuring in step K2).

23. The method according to claim 16, wherein in step E, the protective layer does not fill trenches produced by the separating structures, the protective layer being a soldering stop layer, a conductive adhesive stop layer or a layer for prevention of copper migration.

31. The optoelectronic component according to claim 16, further comprising a rear side contact and the protective layer is a soldering stop layer, a conductive, adhesive stop layer or a layer to prevent copper migration.

32. A component arrangement comprising a plurality of optoelectronic components according to claim 16 arranged on a common carrier layer, wherein individual components are identical or different and at least one of the components has a semiconductor layer comprising an AlGaInP layer and/or an AlGaInAs layer.

24. An optoelectronic component comprising a semiconductor layer arranged on a copper layer as a carrier substrate, and a protective layer arranged at least on lateral areas of the copper layer.

25. The optoelectronic component according to claim 24, wherein the protective layer contains nickel.

26. The optoelectronic component according to claim 24, wherein the at least one semiconductor layer comprises an AlGaInP layer and/or an AlGaInAs layer.

27. The optoelectronic component according to claim 24, wherein at least one contact, layer is arranged on 1 main side of the copper layer which faces the semiconductor layer.

28. The optoelectronic component according to claim 27, wherein the contact layer comprises a solder, selected from the group consisting of gold, palladium, platinum, tin, silver, nickel and alloys thereof.

29. The optoelectronic component according to claim 24, further comprising a mirror layer arranged on a side of the semiconductor layer which faces the copper layer.

30. The optoelectronic component according to claim 29, further comprising a diffusion barrier layer arranged on a side of the mirror layer which faces the copper layer.