×

METHOD AND DEVICE INCLUDING TRANSISTOR COMPONENT HAVING A FIELD ELECTRODE

  • US 20120040505A1
  • Filed: 10/26/2011
  • Published: 02/16/2012
  • Est. Priority Date: 10/26/2009
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a transistor component, including:

  • providing a semiconductor arrangement including;

    a semiconductor body having a first side and at least one first trench extending from the first side, the at least one first trench having sidewalls and lower and upper trench sections, a first field electrode arranged in the lower trench section of the at least one first trench and being insulated from the semiconductor body by a field electrode dielectric;

    forming a dielectric layer on the first field electrode in the at least one first trench, forming the dielectric layer including a deposition process that deposits a dielectric material on the first side of the semiconductor body and on the first field electrode at a higher deposition rate than on sidewalls of the at least one first trench;

    forming a gate dielectric, the gate dielectric at least lining the sidewalls in the upper trench section of the at least one first trench; and

    forming a gate electrode in the upper trench section, the gate electrode being insulated from the first field electrode by the dielectric layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×