A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY
First Claim
1. A method for depositing a nitrogen-containing material on a substrate, comprising:
- processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates; and
performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber.
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Accused Products
Abstract
Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.
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Citations
20 Claims
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1. A method for depositing a nitrogen-containing material on a substrate, comprising:
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processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates; and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for depositing a nitrogen-containing material on a substrate placed in a processing chamber, comprising:
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seasoning a surface of a chamber component disposed in a processing region of the processing chamber by depositing a silicon nitride seasoning layer over the surface of the chamber component; and processing a substrate from a batch of substrates within the processing chamber using a plasma enhanced CVD (PECVD) technique, comprising; depositing a nitrogen-containing material on 1st substrate to Nth substrate by introducing a nitrogen-containing gas and a silicon-containing gas into the processing chamber; seasoning the surface of the chamber component disposed in the processing region of the processing chamber at predetermined intervals by depositing a conductive seasoning layer over the surface of the chamber component; and depositing a nitrogen-containing material on N+1th to N+Nth substrate by introducing a nitrogen-containing gas and a silicon-containing gas into the processing chamber. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for depositing a nitrogen-containing material on a substrate in a processing chamber, comprising:
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performing a first seasoning process to deposit a first seasoning layer over a surface of a chamber component disposed in the processing chamber; processing a batch of substrates within the processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates; and performing a second seasoning process at predetermined intervals during processing the batch of substrates to deposit a second seasoning layer over the surface of the chamber component disposed in the processing chamber. - View Dependent Claims (18, 19, 20)
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Specification