Power MOSFET and Its Edge Termination

• US 20120043602A1
• Filed: 01/11/2010
• Published: 02/23/2012
• Est. Priority Date: 01/11/2010
• Status: Active Grant

• Current Assignee: MaxPower Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Original Assignee: MaxPower Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Inventors: Zeng, Jun, Darwish, Mohamed N., Blanchard, Richard A.
• Granted Patent: US 8,354,711 B2
• Time in Patent Office: Days
• US Class Current: 257/330
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0638 for preventing surface leakage due to surface inversion layer, e.g. with channel stopper channel stoppers in combination with isolation region for integrated circuits H01L21/762
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

Improved MOSFET structures and processes, where multiple polysilicon embedded regions are introduced into the n+ source contact area. A top poly Field Plate is used to shield the electric field from penetrating into the channel, so that a very short channel can be used without jeopardizing the device drain-source leakage current. A bottom poly Field Plate is used to modulate the electric field distribution in the drift region such that a more uniform field distribution can be obtained.

Claims

1-2. -2. (canceled)

3. A semiconductor active device structure, comprising:

a source region having a first conductivity type, and a current-control structure which controls inversion of portions of a body region having a second conductivity type, to thereby control injection of majority carriers from said source region into a semiconductor drift region which has said first conductivity type;

one or more field plates, comprising one or more electrically separated segments within a single insulated trench;

wherein at least one of said segments is electrically floating; and

an additional concentration of dopant atoms of said second conductivity type below the bottom of said trench;

whereby said field plates smooth the gradation of potential in said drift region adjacent said trench, and said additional concentration of dopant atoms helps reduce depletion of said drift region under conditions of reverse bias.

4. The device structure of claim 3, wherein said current-control structure comprises a gate electrode which is capacitively coupled to a body region which has said second conductivity type.

5. The device structure of claim 3, wherein said additional concentration of dopant atoms is sufficient to create an isolated volume of second-conductivity-type material.

6. The device structure of claim 3, wherein said current-control structure comprises a gate electrode which is in a separate trench from said field plates.

7. The device structure of claim 3, wherein said additional concentration of dopants creates a near-intrinsic semiconductor region below said trench.

8. The device structure of claim 3, further comprising a drain region which has said first conductivity type and is more heavily doped than said drift region, and which underlies said drift region so that majority carriers can flow from said drift region downwardly into said drain region.

9. The device structure of claim 3, wherein different ones of said segments are laterally surrounded by different thicknesses of dielectric material.

10. A semiconductor active device structure, comprising:

a current-control structure;

a semiconductor drift region, through which carriers injected by said current control structure can pass in a predominantly vertical direction;

a field-shaping structure, which adjoins at least part of said drift region, and which includes multiple separate conductive segments in a single insulated trench;

wherein at least one of said segments is connected to a fixed potential, and at least one of said segments is electrically floating;

and wherein different ones of said segments are laterally surrounded by different thicknesses of dielectric material; and

an additional concentration of dopant atoms of said second conductivity type below the bottom of said trench;

whereby said field plates smooth the gradation of potential in said drift region adjacent said trench, and said additional concentration of dopant atoms helps reduce depletion of said drift region under conditions of reverse bias.

11. The device structure of claim 10, wherein said current-control structure comprises a gate electrode which is capacitively coupled to a body region which has said second conductivity type.

12. The device structure of claim 10, wherein said additional concentration of dopant atoms is sufficient to create a volume of second-conductivity-type material.

13. The device structure of claim 10, wherein said current-control structure comprises a gate electrode which is in a separate trench from said field plates.

14. The device structure of claim 10, wherein said current-control structure comprises a gate electrode which is in a separate trench from said field plates.

15. The device structure of claim 10, further comprising a drain region which has said first conductivity type and is more heavily doped than said drift region, and which underlies said drift region so that majority carriers can flow from said drift region downwardly into said drain region.

16. The device structure of claim 10, wherein different ones of said segments are laterally surrounded by different thicknesses of dielectric material.

17. A semiconductor active device structure, comprising:

a source region, and a current-control structure which controls injection of majority carriers from said source region into a semiconductor drift region which has said first conductivity type;

a plurality of field plates, comprising multiple electrically separated electrodes within a single insulated trench; and

an additional concentration of dopant atoms of said second conductivity type below the bottom of said trench;

said drift region having different net doping concentrations at different depths, such that at least some ones of said field plates laterally adjoin portions of said drift region with different dopant concentrations;

whereby said field plates smooth the gradation of potential in said drift region adjacent said trench, and said additional concentration of dopant atoms helps reduce depletion of said drift region under conditions of reverse bias.

18. The device structure of claim 17, wherein said current-control structure comprises a gate electrode which is capacitively coupled to a body region which has said second conductivity type.

19. The device structure of claim 17, wherein said first conductivity type is n-type.

20. The device structure of claim 17, wherein said additional concentration of dopant atoms consists of acceptor dopant atoms.

21. The device structure of claim 17, wherein said first conductivity type is n-type.

22. The device structure of claim 17, wherein said first conductivity type is n-type.